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Title: Nanomembrane structures having mixed crystalline orientations and compositions

Patent ·
OSTI ID:1150081
; ;

The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

Research Organization:
Wisconsin Alumni Research Foundation, Madison, WI (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-03ER46028
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
8,803,195
Application Number:
12/045,263
OSTI ID:
1150081
Country of Publication:
United States
Language:
English

References (21)

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N-type Thin-film Transistors Fabricated on Transferred, Elastically Strain-Shared Si/SiGe/Si Membranes conference February 2006
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Semiconductor device having trench isolation patent September 1992
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Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon–germanium alloys journal February 2007
Strained silicon CMOS on hybrid crystal orientations patent August 2006
Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs conference January 2003
High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers journal July 2006
Stressed field effect transistors on hybrid orientation substrate patent July 2008

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Related Subjects

36 MATERIALS SCIENCE