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Title: Room-temperature magnetoelectric multiferroic thin films and applications thereof

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
Authors:
; ;
Publication Date:
OSTI Identifier:
1150080
Report Number(s):
8,803,264
13/118,275
DOE Contract Number:
FG02-08ER46526
Resource Type:
Patent
Research Org:
University of Puerto Rico, San Juan, PR
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE