Behavior of deuterium retention and surface morphology for VPS–W/F82H
The deuterium (D) retention for Vacuum Plasma Spray (VPS)–tungsten (W)/F82H was studied using two different implantation methods, namely D plasma exposure and View the MathML source implantation. The D retention for polished VPS–W/F82H after plasma exposure was found to be reduced compared to that for polycrystalline tungsten. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations indicated that porous structures around grain boundaries and the interface between VPS–W layers would be potential D diffusion paths, leading to low D retention. In the case of View the MathML source implantation, the shape of D2 TDS spectrum was almost the same as that for D plasma-exposed VPS–W/F82H; however, the D retention was quite high for unpolished VPS–W/F82H, indicating that most of D was trapped by the oxide layer, which was produced by the VPS process. The reduction of surface area due to the polishing process also reduces D retention for VPS–W/F82H. These results indicate that controlling the surface chemical states is important for the reduction of tritium retention for future fusion reactors.
- Research Organization:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Organization:
- DOE - SC
- DOE Contract Number:
- DE-AC07-05ID14517
- OSTI ID:
- 1126740
- Report Number(s):
- INL/JOU-14-31670
- Journal Information:
- Journal of Nuclear Materials, Vol. 442, Issue 1 - 3, Supplement 1
- Country of Publication:
- United States
- Language:
- English
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