Evidence of ion mixing increasing the thermal boundary conductance across aluminum/silicon interfaces.
Journal Article
·
· Advanced Functional Materials
OSTI ID:1121147
- Sandia National Laboratories, Livermore, CA
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- DE-AC04-94AL85000
- OSTI ID:
- 1121147
- Report Number(s):
- SAND2013-10142J; 485525
- Journal Information:
- Advanced Functional Materials, Related Information: Proposed for publication in Advanced Functional Materials .
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of surface roughness and oxide layer on the thermal boundary conductance at aluminum/silicon interfaces.
Thermal boundary conductance accumulation and spectral phonon transmission across interfaces: experimental measurements across metal/native oxide/Si and metal/sapphire interfaces.
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces.
Journal Article
·
Tue Jun 01 00:00:00 EDT 2010
· Physical Review B
·
OSTI ID:1121147
+1 more
Thermal boundary conductance accumulation and spectral phonon transmission across interfaces: experimental measurements across metal/native oxide/Si and metal/sapphire interfaces.
Journal Article
·
Tue Jul 01 00:00:00 EDT 2014
· Nature Communications
·
OSTI ID:1121147
+9 more
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces.
Journal Article
·
Tue Feb 01 00:00:00 EST 2011
· Applied Physics Letters
·
OSTI ID:1121147
+4 more