Quantum oscillation of Rashba spin splitting in topological insulator Bi2Se3 induced by the quantum size effects of Pb adlayers

Journal Article · Sun Jan 01 00:00:00 EST 2012 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.86.155317· OSTI ID:1060854

Yang, Hong ^[1]; Peng, Xiangyang ^[1]; Wei, Xiaolin ^[1]; Liu, Wenliang ^[1]; Zhu, Wenguang ^[2]; Xiao, Di ^[2]; Stocks, George Malcolm ^[2]; Zhong, Jianxin ^[1]

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1. Xiangtan University, Xiangtan Hunan, China
2. ORNL

Basedon rst-principlescalculationswithindensityfunctionaltheory,we ndthatPbadlayerscaninduceagiantRashbaspinsplittinginthequantumwellstatesofanunderlyingBi2Se3 lm.AsthethicknessofthePbadlayersvaries,thedistancebetweenthePbadlayerandtheBi2Se3 lm,thechargedensityattheinterface,andthebindingbetweenthePbadlayersexhibitanoscillatorybehaviorduetothequantumsizeeffects,whichinturnmodulatesthemagnitudeoftheRashbaspinsplittingofthequantumwellstatesintheBi2Se3 lm.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1060854
• Journal Information: Physical Review B, Vol. 86, Issue 15; ISSN 1098--0121
• Country of Publication: United States
• Language: English