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Title: Method for synthesis of high quality graphene

A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Piedmont, CA
  2. Berkeley, CA
  3. Albany, CA
  4. Beneditkbeuern, DE
  5. Oakland, CA
Publication Date:
OSTI Identifier:
1039209
Report Number(s):
8,142,754
US patent application 13/043,329
DOE Contract Number:
AC02-05CH11231
Resource Type:
Patent
Research Org:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE