Flip-chip and backside techniques.
Conference
·
OSTI ID:1022991
- Infineon, Regensburg, Germany
State-of-the-art techniques for failure localization and design modification through bulk silicon are essential for multi-level metallization and new, flip chip packaging methods. The tutorial reviews the transmission of light through silicon, sample preparation, and backside defect localization techniques that are both currently available and under development. The techniques covered include emission microscopy, scanning laser microscope based techniques (electrooptic techniques, LIVA and its derivatives), and other non-IR based tools (FIB, e-beam techniques, etc.).
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1022991
- Report Number(s):
- SAND2010-5394C; TRN: US201118%%663
- Resource Relation:
- Conference: Proposed for presentation at the ISTFA (International Symposium for Testing and Failure Analysis) held November 14-18, 2010 in Dallas, TX.
- Country of Publication:
- United States
- Language:
- English
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