Local Strain, Defects and Crystallographic Tilt in GaN(0001) Layers Grown by Maskless Pendeo-epitaxy from X-ray Microdiffraction

Journal Article · Tue Jul 13 00:00:00 EDT 2010 · J. Appl. Phys.

OSTI ID:1008499

Barabash, R I; Ice, G E; Liu, W; Einfeldt, S; Roskovski, A M; Davis, R F ^[1]

---

1. ORNL

Polychromatic x-ray microdiffraction, high-resolution monochromatic x-ray diffraction, and finite element simulations have been used to determine the distribution of strain, defects, and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeo-epitaxy. An important materials parameter was the width-to-height ratio of the etched columns of GaN from which occurred the lateral growth of the wings. Tilt boundaries formed at the column/wing interface for samples with a large ratio. Formation of the tilt boundary can be avoided by using smaller ratios. The strain and tilt across the stripe increased with the width-to-height ratio. The wings were tilted upward at room temperature.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
• Sponsoring Organization: USDOE
• OSTI ID: 1008499
• Journal Information: J. Appl. Phys., Vol. 97, Issue (1) ; 2005; ISSN 0021-8979
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEFECTS
DISTRIBUTION
STRAINS
X-RAY DIFFRACTION