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Title: TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materialsmore » science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.« less
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Title: TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells
Authors:
Publication Date: 2002-04-17
OSTI Identifier: 1007468
DOE Contract Number: AC02-07CH11359
Other Number(s): TRN: US1200631
Resource Type: Multimedia
Resource Relation: Conference: Fermilab Colloquia, Fermi National Accelerator Laboratory (FNAL), Batvia, Illinois (United States), presented on April 17, 2002
Research Org: FNAL (Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States))
Sponsoring Org: USDOE Office of Science (SC)
Subject: 14 SOLAR ENERGY ; 43 PARTICLE ACCELERATORS ; ALLOYS ; DESIGN ; DIFFUSION LENGTH ; FERMILAB ; FERMILAB ACCELERATOR ; SOLAR CELLS
Country of Publication: United States
Language: English
Run Time: 1:09:52
System Entry Date: 2016-01-27