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Title: MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic imore »nterlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.« less
Title: MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics
Publication Date: 2009-07-01
OSTI Identifier: 1007263
DOE Contract Number: ACO2-06CH11357
Resource Type: Multimedia
Resource Relation: Conference: APS Colloquium Series, Advanced Photon Source (APS) at Argonne National Laboratory, Argonne, Illinois (United States), presented on July 01, 2009
Research Org: ANL (Argonne National Laboratory (ANL), Argonne, IL (United States))
Sponsoring Org: USDOE Office of Science (SC)
Country of Publication: United States
Language: English
Run Time: 0:49:22
System Entry Date: 2016-01-27