10 Search Results

A recent trend in commercial PV modules is a transition to n-type silicon cells, including passivated emitter rear totally diffused (n-PERT), tunnel oxide passivated contact (TOPCon), and silicon heterojunction (SHJ). There is evidence via lab studies that some of these cells are more susceptible to UV induced degradation (UVID), yet there is a lack of confirmation that such degradation occurs in the field. Current IEC standards designed to screen for early module failures require only minimal UV exposure (15 kWh/m2 280-400 nm, ~2-3 months equivalent outdoor exposure). Here, we investigate fielded n-PERT silicon (Si) modules from a commercial utility thatmore » show power losses of ~2%/year. We present a comprehensive picture of the physics and chemistry of degradation supported by both module and cell electronic characterization (EL, PL, IV, EQE, and DLIT) and materials-level morphological and chemical analysis (SEM, EDS, XPS, FTIR, and HPLC). All sampled site modules show short circuit current (Isc) and open circuit voltage (Voc) losses when compared to unfielded spares, with the most severely degraded also having losses in fill factor (FF). We identify two different degradation modes contributing to overall power loss: (1) external quantum efficiency (EQE) measurements show losses in the blue range of the spectra, indicative of cell surface recombination losses, and (2) variations in high series resistance (Rs) at the cell level that are correlated with compositional differences in cell metallization. Using unfielded spares, we were able to reproduce Voc, Isc, and EQE losses via a minimum UV stress of 67.5 kWh/m2 (280-400 nm), 4.5x the exposure currently required in IEC 61215-2 (MQT 10). Degradation continued with additional UV dosage equivalent to the fielded modules (405 kWh/m2 total), with power loss leveling out at an average of 6.1%. Subsequent 1000 h of 85% RH/85degrees C damp heat testing showed that cells exposed to UV underwent additional severe series resistance degradation, even those without the susceptible paste composition seen in the field, whereas non-UV exposed cells saw little change. We attribute this to higher concentrations of acetic acid generated on the UV exposed area of the module, leading to degradation of the gridline/cell interface and high Rs. This study is unique in that it reproduces field observed utility scale UVID with an accelerated test and supports the need for standards development for longer UV exposure combined with other stress factors to catch materials interplay within a module package.« less

Low levelized cost of electricity (LCOE) has been identified as critical for widespread adoption of photovoltaics (PV) without subsidies. Maintaining decades-long high-energy production is often an under-recognized opportunity in meeting cost goals because component lifetimes are not fully quantified at the time of manufacture. Whereas certain standardized tests minimize risk of early failure, there is little guidance to quantitatively predict degradation (or lack thereof) over decades, based on accelerated tests. In this article, we move toward bridging the understanding between indoor accelerated tests and outdoor performance data, with the goal of predicting energy yield with enough accuracy to inform financialmore » decisions. Light- and elevated temperature-induced degradation (LETID) in p-type Si modules is analyzed in terms of impact on long-term module performance and thus LCOE. A method to predict the progression of LETID, using fixed kinetic constants and a numerical solution to the basic reaction rate equations, is detailed. Predictions are compared against both published data and that new to this study. These data include both indoor accelerated tests and fielded modules. We use the results in financial models to derive LCOE of modules in different climates with varying amounts of LETID, including uncertainty. Cost models based on the predictions indicate that LETID has a significant and climate-dependent impact on LCOE. Finally, we show that - even given the uncertainties identified in the study - these financial calculations can provide useful guidance to quantify risk based on accelerated test results. The analysis serves as an example of developing a predictive approach to PV reliability using physics of failure.« less

Abstract This paper reports the results of an international interlaboratory comparison study on light‐ and elevated temperature‐induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection and screen a large and diverse set of prototype modules for LETID. Results across labs indicate the reproducibility of LETID testing is likely within ±1% of maximum power (P _MP ). In intentionally engineered LETID‐sensitive modules, mean degradation after the prescribed detection stress is roughly 6% P _MP . In other module types the LETIDmore » sensitivity is smaller, and in some we observe essentially negligible degradation attributable to LETID. In LETID‐sensitive modules, both open‐circuit voltage (V _OC ) and short‐circuit current (I _SC ) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the estimated loss of cell I _SC , which drives loss of module I _SC . Overall, this work has helped inform the creation of a forthcoming standard technical specification for LETID testing of PV modules, IEC TS 63342 ED1, and should aid in the interpretation of results from that and other LETID tests.« less

Plated copper (Cu) contacts for silicon (Si) solar cells are an attractive alternative material to conventional screenprinted silver, but there are unresolved questions on the long-term integrity of plated contact structures. Here, in this work, we perform characterization on plated Cu contacts from encapsulated cells that were degraded during extended exposure to damp heat (DH) stress. First, using energy-dispersive X-ray spectroscopy, we find evidence of Cu outdiffusion upward through capping layers made of both tin and silver applied with light-induced plating, resulting in a layer of Cu on the outer contact surface. We hypothesize that if Cu is mobile inmore » the module, it may eventually find some route by which to enter the Si cells where it can degrade performance. Subsequently, in several types of Cu-plated, DH-degraded cells, secondary ion mass spectrometry detects elevated levels of Cu at the Si surface and in the Si cell bulk, which suggests that Cu can indeed migrate from contacts into Si over the course of DH stress.« less

Light and elevated temperature induced degradation (LeTID) is accelerated nearly linearly by the presence of excess carriers. It is therefore important to understand how excess carrier concentration (Δn) changes as a function of exposure conditions, materials properties, and sample structure. We simulate Δn as a function of wafer thickness and bulk minority carrier lifetime (τ) in solar cells and wafers using SCAPS and Quokka3. We also derive closed-form analytic expressions. For wafers, there is a near-linear relationship between Δn and τ or thickness, whereas for solar cells, Δn in the bulk may become limited by rear surface recombination. Thus, LeTIDmore » may progress more quickly in wafers than in cells, with a stronger dependence on τ. When comparing experiments, observed degradation rates must be corrected between samples or conditions to account for differences in Δn. This study demonstrates three tools to estimate the magnitude of such corrections, which can aid in the quantitative interpretation of LeTID data and performance predictions. Finally, while each tool yields similar results, there are advantages to each approach that must be weighed in terms of simplicity of inputs versus sophistication of treatment. Incomplete specification of back contact characteristics in commercial products is identified as an important contributor to uncertainty in expected LeTID rates.« less

The current popularity of photovoltaic (PV) systems is due in large part to their exceptional reliability and significantly lower cost than other energy sources. Studying cell and module degradation is key to promote further development in the state of the art. Fielded or accelerated aged modules exhibit different failure modes, of which metallization degradation (contacts and interconnections) is prevalent. In this work, we discuss how multiscale characterization methods can be applied to a variety of module technologies that have been field exposed and have undergone accelerated age testing. These methods include performing characterization on the module level, cell level, andmore » finally the materials level. The observed performance losses from the module- and cell-level characterization can be correlated with materials properties to find out the root cause of degradation. We recommend an initial nondestructive characterization suite, including module- and cell-level current-voltage ( I--V ), Suns-V OC , photoluminescence and electroluminescence imaging, quantum efficiency, ultraviolet fluorescence imaging, and thermal infrared imaging. Samples are then extracted from particularly degraded regions of the module and prepared for materials characterization techniques, such as top-down and cross-sectional scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, Raman spectroscopy, and transmission electron microscopy, allowing a deeper look into the mechanism behind the metallization degradation. This article serves as an instructional review to introduce the different multiscale characterization methods and how they can be effectively applied to perform PV degradation studies. Furthermore, we also share some of our examples and discuss the strengths, limitations, and best practices for each of the characterization techniques.« less

Abstract Crystalline silicon solar cells with copper‐plated contacts are fabricated, encapsulated in ethylene‐vinyl acetate (EVA), and subject to extended damp heat stress (85° C and 85% relative humidity). We source cell precursors from several different cell manufacturers and employ several different patterning methods of the silicon nitride layer and deposit a plated front contact stack of nickel, copper, and tin using light‐induced plating. Across different Cu‐plated samples, we find similar degradation that impacts both series resistance and diode quality of the cells, indicating that there is some degradation of the p‐n junction. The overall degradation is on the order ofmore » 15%–20% of maximum power (P _MP ), and roughly half of this degradation is attributable to degradation of the p‐n junction. Control samples with silver‐screenprinted contacts do not exhibit the same degradation, and p‐n junction degradation in copper‐plated samples is prevented by changing the encapsulant from EVA to a polyolefin. The degradation mode is hypothesized to be the diffusion of copper from the contact, followed by the transport of this copper into the silicon cell via some mechanism facilitated by the degraded EVA encapsulant.« less

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE),more » and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.« less

For commercially-viable solar-grade silicon, thinner wafers and surface saturation current densities below 1 fA cm ⁻² , are required to significantly increase the practical efficiency limit of solar cells.