UV-Enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern

Bhandari, Bhojraj; Varghese, Sinto; Ghimire, Amar R.; Neupane, Bimal; Wang, Sicheng; Jiang, Yan; Gonzalez Rodriguez, Roberto; Krylyuk, Sergiy; Davydov, Albert V.; Wang, Yuanxi; Yan, Hao; Cui, Jingbiao; Lin, Yuankun

doi:10.1021/acsaom.5c00423

Title: UV-Enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern

Journal Article · Tue Nov 25 00:00:00 UTC 2025 · ACS Applied Optical Materials

DOI: https://doi.org/10.1021/acsaom.5c00423 · OSTI ID:3012754

^[1];

^[1]; Ghimire, Amar R. ^[1]; Neupane, Bimal ^[1];

^[1]; Jiang, Yan ^[1];

^[1];

^[2]; Davydov, Albert V. ^[2];

^[1];

^[1]

Univ. of North Texas, Denton, TX (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)

III–VI post-transition-metal chalcogenides are layered semiconductor materials that exhibit direct band gaps in multilayers. Defect engineering is essential in 2D layered semiconductors for functional devices. Here, in this work, we report defect engineering in multilayer gallium selenide (GaSe) and indium selenide (InSe), where defects generated by ultraviolet (UV, 325 nm) laser irradiation result in an additional photoluminescence (PL) line. The additional PL line is due to defect-bound excitons. Characteristics of the defect emission are similar in GaSe and InSe samples subjected to UV irradiation, air annealing, and hydrostatic pressure. Two-beam UV interference was applied to create grating patterns with a periodic array of low and high densities of defects in GaSe. Density functional theory has identified the defect type in GaSe. The results provide valuable insights into defect generation and UV scribing of photonic circuits in 2D Se-based multilayers for optical integration in a 2D platform.

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Research Organization:: Univ. of North Texas, Denton, TX (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0004114

OSTI ID:: 3012754

Journal Information:: ACS Applied Optical Materials, Journal Name: ACS Applied Optical Materials Journal Issue: 12 Vol. 3; ISSN 2771-9855

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

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