In situ synchrotron x-ray studies of epitaxial SrCoOx films during ionic liquid gating
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Argonne National Laboratory (ANL), Argonne, IL (United States); Drexel Univ., Philadelphia, PA (United States)
- Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Oregon State Univ., Corvallis, OR (United States)
- Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. at Buffalo, NY (United States)
- Northwestern Univ., Evanston, IL (United States)
- Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
The manipulation of ions in complex oxide materials can be used to mimic brain-like plasticity through changes to the resistivity of a neuromorphic device. Advances in the design of more energy efficient devices require improved understanding of how ions migrate within a material and across its interface. We investigate the exchange of oxygen and hydrogen in a model SrCoOx epitaxial film—a material that transitions between a ferromagnetic metal and antiferromagnetic insulator depending on the oxygen concentration. Changes to the film during ionic liquid gating were measured by in situ synchrotron x-ray techniques as a function of time and gate voltage, examining the reversibility of the oxide over one complete gating cycle. We find that the out-of-plane lattice constant and oxygen vacancy concentration of SrCoOx are largely reversible although changes were observed in the ordered vacancy structure. Our results provide much needed insight into electrolyte-gated phase behavior in the transition metal oxides.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 3006361
- Journal Information:
- APL Materials, Journal Name: APL Materials Journal Issue: 6 Vol. 13; ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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