Structural inversion asymmetry in epitaxial ultrathin films of Bi(111)/InSb(111)B

Inbar, Hadass S.; Zubair, Muhammad; Dong, Jason T.; Engel, Aaron N.; Dempsey, Connor P.; Chang, Yu Hao; Nishihaya, Shinichi; Khalid, Shoaib; Fedorov, Alexei V.; Janotti, Anderson; Palmstrøm, Chris J.

doi:10.1103/physrevmaterials.9.054202

Title: Structural inversion asymmetry in epitaxial ultrathin films of Bi(111)/InSb(111)B

Journal Article · Wed May 14 00:00:00 UTC 2025 · Physical Review Materials

DOI: https://doi.org/10.1103/physrevmaterials.9.054202 · OSTI ID:2586623

^[1]; Zubair, Muhammad ^[2]; Dong, Jason T. ^[1];

^[1];

^[1]; Nishihaya, Shinichi ^[3];

^[4]; Fedorov, Alexei V. ^[5]; Janotti, Anderson ^[2];

^[1]

Univ. of California, Santa Barbara, CA (United States)
Univ. of Delaware, Newark, DE (United States)
Univ. of California, Santa Barbara, CA (United States); Tokyo Institute of Technology (Japan)
Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)

Bismuth (Bi) films hold potential for spintronic devices due to strong spin-orbit coupling. Understanding the growth, surface states, and interactions with the substrate is key to their functionalization. Large-area high-quality (111) Bi ultrathin films were grown on InSb (111)B substrates by molecular beam epitaxy (MBE). Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to nonequivalent interface potentials. Analysis of angle-resolved photoemission spectroscopy (ARPES) measurements, employed to characterize the evolution of the surface states with film thickness, indicate a crossing at the $$\overline{M}$$ point, suggesting a topologically trivial phase in the thin film. In conclusion, the results show the presence of interfacial bonds to the substrate breaks inversion symmetry, preventing the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation of two-dimensional materials.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)

Sponsoring Organization:: National Energy Research Scientific Computing Center (NERSC); National Science Foundation (NSF); US Department of Energy; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Scientific User Facilities Division (SC-22.3 ); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-05CH11231; AC02-09CH11466; SC0014388

OSTI ID:: 2586623

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 5 Vol. 9; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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