Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Feldman, Mayer M.; Fuchs, Gordian; Liu, Lydia T.; D’Imperio, Luke Anthony; Henry, Michael David; Shaner, Eric A.; Lyon, Stephen A.

doi:10.1007/s10909-024-03256-1

Title: Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

Journal Article · Tue Jan 21 19:00:00 EST 2025 · Journal of Low Temperature Physics

DOI: https://doi.org/10.1007/s10909-024-03256-1 · OSTI ID:2585694

Feldman, Mayer M. ^[1]; Fuchs, Gordian ^[1]; Liu, Lydia T. ^[1]; D’Imperio, Luke Anthony ^[2]; Henry, Michael David ^[2]; Shaner, Eric A. ^[2]; Lyon, Stephen A. ^[3]

Princeton University, NJ (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Princeton University, NJ (United States); EeroQ Corporation, Chicago, IL (United States)

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. Here, we show that this circuit has a signal-to-noise ratio (SNR) of ~ 2 $$\frac{e}{√Hz}$$ at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525; SC0012704; SC0020136

OSTI ID:: 2585694

Report Number(s):: SAND--2025-09456J; 1755282

Journal Information:: Journal of Low Temperature Physics, Journal Name: Journal of Low Temperature Physics Journal Issue: 5-6 Vol. 219; ISSN 1573-7357; ISSN 0022-2291

Publisher:: Springer Science and Business Media LLCCopyright Statement

Country of Publication:: United States

Language:: English

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Charge-Coupled Devices
Electrons on Helium
High-Electron-Mobility Transistors
Single-Electron Sensing

Title: Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

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