Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Guo, Yijin; Qin, Yuan; Xiao, Ming; Porter, Matthew; Song, Qihao; Popa, Daniel; Efthymiou, Loizos; Cheng, Kai; Kravchenko, Ivan; Shao, Linbo; Wang, Han; Udrea, Florin; Zhang, Yuhao

doi:10.1109/LED.2025.3539175

Title: Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Journal Article · Mon Feb 03 19:00:00 EST 2025 · IEEE Electron Device Letters

DOI: https://doi.org/10.1109/LED.2025.3539175 · OSTI ID:2573367

Guo, Yijin ^[1];

^[1];

^[2];

^[1];

^[1]; Popa, Daniel ^[3]; Efthymiou, Loizos ^[3]; Cheng, Kai ^[4];

^[5];

^[1]; Wang, Han ^[6];

^[3];

^[6]

Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
Xidian Univ., Xi’an (China)
Cambridge GaN Devices Ltd. (United Kingdom)
Enkris Semiconductor Inc., Suzhou (China)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Univ. of Hong Kong, Pokfulam (Hong Kong)

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V_th) of 0.6 V and a low specific on-resistance (R_on,sp) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R_on,sp trade-offs, in all the reported MBDS devices. The R_on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2573367

Journal Information:: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 4 Vol. 46; ISSN 0741-3106; ISSN 1558-0563

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
GaN
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Power electronics
bidirectional switch
monolithic
power semiconductor device

Title: Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

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