Micro-segregation phenomena and related spectroscopic signals in melt-grown β-Ga2O3 single crystals

Dutton, Benjamin L.; Remple, Cassandra; Huso, Jesse; Jesenovec, Jani; Shen, Jimmy-Xuan; Varley, Joel B.; Voss, Lars F.; McCluskey, Matthew D.; McCloy, John S.

doi:10.1063/5.0229858

Title: Micro-segregation phenomena and related spectroscopic signals in melt-grown β-Ga₂O₃ single crystals

Journal Article · Fri May 02 00:00:00 UTC 2025 · Journal of Applied Physics

DOI: https://doi.org/10.1063/5.0229858 · OSTI ID:2564317

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Washington State Univ., Pullman, WA (United States)
Klar Scientific, Pullman, WA (United States)
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

One of the primary advantages of β-Ga₂O₃ over incumbent wide bandgap semiconductors is the ability to grow directly from the melt. Melt growth, using Czochralski or similar methods, results in impurities in the crystal which originate from the crucible, such as iridium and other transition metals like chromium. These impurities exhibit optoelectronic signatures useful for their identification and sensitive to the Fermi energy of a given crystal (i.e., signatures vary with the electrical conductivity of the matrix). In this work, we describe how laser Raman systems can be used to map and spatially correlate Cr³⁺ photoluminescence, electronic-coupled Raman scattering from Ir⁴⁺ d–d internal transitions, and the Raman line attributed to hydrogenic shallow donors. Laser ablation inductively coupled plasma mass spectrometry directly measured spatially dependent relative metal concentrations and confirmed spectroscopic signals resulting from heterogeneities in impurity concentrations in β-Ga₂O₃ boules. Mapping of photoluminescence and Raman-related signatures is, thus, demonstrated as an effective and facile method for spatial measurement of chemical heterogeneities in both insulating and conductive melt-grown β-Ga₂O₃ crystals.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: US Air Force Office of Scientific Research (AFOSR); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 2564317

Report Number(s):: LLNL--JRNL-2010076

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 17 Vol. 137; ISSN 0021-8979; ISSN 1089-7550

Publisher:: AIP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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