2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates

Alam, Md Tahmidul; Chen, Jiahao; Stephenson, Kenneth; Mamun, Md Abdullah-Al; Mazumder, Abdullah Al Mamun; Pasayat, Shubhra S.; Khan, Asif; Gupta, Chirag

doi:10.35848/1882-0786/ad9db4

Title: 2 kV Al _0.64 Ga _0.36 N-channel high electron mobility transistors with passivation and field plates

Journal Article · 13 January 2025 · Applied Physics Express

DOI: https://doi.org/10.35848/1882-0786/ad9db4 · OSTI ID:2500919

; Chen, Jiahao; Stephenson, Kenneth; Mamun, Md Abdullah-Al; Mazumder, Abdullah Al Mamun; Pasayat, Shubhra S.; Khan, Asif; Gupta, Chirag

Abstract High voltage (∼2 kV) Al _0.64 Ga _0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm ² ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si ₃ N ₄ surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.

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Sponsoring Organization:: USDOE; USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001825

OSTI ID:: 2500919

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 1 Vol. 18; ISSN 1882-0778

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: Japan

Language:: English

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Title: 2 kV Al _0.64 Ga _0.36 N-channel high electron mobility transistors with passivation and field plates