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Title: Nanoscale Ferroelectric Programming of van der Waals Heterostructures

Journal Article · · Nano Letters
ORCiD logo [1]; ORCiD logo [2];  [2]; ORCiD logo [3];  [3];  [3]; ORCiD logo [4];  [4];  [4];  [3];  [5]; ORCiD logo [4]
  1. Carnegie Mellon University, Pittsburgh, PA (United States); University of Pittsburgh, PA (United States); Pittsburgh Quantum Institute, PA (United States)
  2. Carnegie Mellon University, Pittsburgh, PA (United States); Pittsburgh Quantum Institute, PA (United States)
  3. Pennsylvania State University, University Park, PA (United States)
  4. University of Pittsburgh, PA (United States); Pittsburgh Quantum Institute, PA (United States)
  5. Carnegie Mellon University, Pittsburgh, PA (United States)

We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in Al1–xBxN (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p–n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.

Research Organization:
Carnegie Mellon University, Pittsburgh, PA (United States); University of Pittsburgh, PA (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0022277
OSTI ID:
2481380
Journal Information:
Nano Letters, Journal Name: Nano Letters Journal Issue: 51 Vol. 24; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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