Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation

Huso, Jesse; McCluskey, Matthew D.; McCloy, John S.; Frye, Clint D.; Varley, Joel B.; Voss, Lars F.

doi:10.1364/ome.539744

Title: Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation

Journal Article · 12 November 2024 · Optical Materials Express

DOI: https://doi.org/10.1364/ome.539744 · OSTI ID:2477108

Huso, Jesse ^[1];

^[2];

^[3]; Frye, Clint D. ^[4]; Varley, Joel B. ^[4]; Voss, Lars F. ^[4]

Klar Scientific, Inc., Pullman, WA (United States)
Klar Scientific, Inc., Pullman, WA (United States); Washington State University, Pullman, WA (United States)
Washington State University, Pullman, WA (United States)
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga₂O₃). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Washington State Univ., Pullman, WA (United States); Washington State University, Pullman, WA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC52-07NA27344; FG02-07ER46386

OSTI ID:: 2477108

Report Number(s):: LLNL--JRNL-868888

Journal Information:: Optical Materials Express, Journal Name: Optical Materials Express Journal Issue: 12 Vol. 14; ISSN 2159-3930

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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