Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors

Huang, Zhujun; Lee, Ryong-Gyu; Cuniberto, Edoardo; Song, Jiyoon; Lee, Jeongwon; Alharbi, Abdullah; Kisslinger, Kim; Taniguchi, Takashi; Watanabe, Kenji; Kim, Yong-Hoon; Shahrjerdi, Davood

doi:10.1021/acsnano.4c06929

Title: Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors

Journal Article · 27 September 2024 · ACS Nano

DOI: https://doi.org/10.1021/acsnano.4c06929 · OSTI ID:2474822

Huang, Zhujun ^[1]; Lee, Ryong-Gyu ^[2]; Cuniberto, Edoardo ^[1];

^[2]; Lee, Jeongwon ^[2]; Alharbi, Abdullah ^[3]; Kisslinger, Kim ^[4];

^[5]; Watanabe, Kenji ^[5];

^[2];

^[1]

New York Univ. (NYU), NY (United States)
Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
New York Univ. (NYU), NY (United States); King Abdulaziz City for Science and Technology (KACST), Riyadh (Saudi Arabia)
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
National Institute for Materials Science (NIMS), Tsukuba (Japan)

Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantum devices, where defects significantly impact performance. Therefore, characterizing and engineering hBN defects are crucial for advancing these technologies. Here, we examine the capture and emission dynamics of defects in hBN by utilizing low-frequency noise (LFN) spectroscopy in hBN-encapsulated and graphene-contacted MoS₂ field-effect transistors (FETs). The low disorder of this heterostructure allows the detection of random telegraph signals (RTS) in large device dimensions of 100 μm² at cryogenic temperatures. Analysis of gate bias- and temperature-dependent LFN data indicate that RTS originates from a single trap species within hBN. By performing multi-space density functional theory (MS-DFT) calculations on a gated defective hBN/MoS₂ heterostructure model, we assign substitutional carbon atoms in boron sites as the atomistic origin of RTS. This study demonstrates the utility of LFN spectroscopy combined with MS-DFT analysis on a low-disorder all-vdW FET as a powerful means for characterizing the atomistic defects in single-crystal hBN.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: Japan Society for the Promotion of Science (JSPS); National Research Foundation of Korea (NRF); National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0012704

OSTI ID:: 2474822

Report Number(s):: BNL--226285-2024-JAAM

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 42 Vol. 18; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors

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