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Vibrational Spectra of Hydrogen in Silicon and Germanium
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Hydrogen in crystalline semiconductors
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Femtosecond laser ablation of silicon–modification thresholds and morphology
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Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
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December 2001 |
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The optical properties of luminescence centres in silicon
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May 1989 |
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Hydrogen passivation of gold centers in silicon
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Historical evolution of pulsed laser annealing for semiconductor processing
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January 2021 |
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Spinney: Post-processing of first-principles calculations of point defects in semiconductors with Python
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July 2021 |
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VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code
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October 2021 |
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Laser Writing of Scalable Single Color Centers in Silicon Carbide
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March 2019 |
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Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride
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April 2021 |
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Detection of Single W-Centers in Silicon
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July 2022 |
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Ultralong spin coherence time in isotopically engineered diamond
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April 2009 |
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Laser writing of coherent colour centres in diamond
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December 2016 |
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Laser manufacturing of spatial resolution approaching quantum limit
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January 2024 |
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Wafer-scale nanofabrication of telecom single-photon emitters in silicon
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December 2022 |
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The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium
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January 2023 |
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Individually addressable and spectrally programmable artificial atoms in silicon photonics
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April 2023 |
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All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
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June 2023 |
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Optical observation of single spins in silicon
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July 2022 |
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Single artificial atoms in silicon emitting at telecom wavelengths
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November 2020 |
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Defect engineering of silicon with ion pulses from laser acceleration
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March 2023 |
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Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing
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April 2024 |
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Carbon related defects in irradiated silicon revisited
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May 2014 |
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Influence of the exchange screening parameter on the performance of screened hybrid functionals
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June 1982 |
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Generating T centres in photonic silicon-on-insulator material by ion implantation
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October 2021 |
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Silicon-Integrated Telecommunications Photon-Spin Interface
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October 2020 |
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Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon
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July 2023 |
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Femtosecond-laser-induced creation of G and W color centers in silicon-on-insulator substrates
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April 2024 |
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Multiscale simulations of electron and ion dynamics in self-irradiated silicon
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July 2020 |
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Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory
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September 2021 |
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Effect of localization on photoluminescence and zero-field splitting of silicon color centers
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October 2022 |
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Ab initiomolecular dynamics for liquid metals
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January 1993 |
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Identification of the migration path of interstitial carbon in silicon
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September 1994 |
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Interaction of hydrogen with substitutional and interstitial carbon defects in silicon
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February 1998 |
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From ultrasoft pseudopotentials to the projector augmented-wave method
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January 1999 |
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Strain effect in silicon-on-insulator materials: Investigation with optical phonons
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December 2000 |
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Electrostatics-based finite-size corrections for first-principles point defect calculations
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May 2014 |
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Theory of Spin-Conserving Excitation of the N − V − Center in Diamond
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October 2009 |
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Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon
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February 2021 |
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EPR Observation of the Isolated Interstitial Carbon Atom in Silicon
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May 1976 |
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Generalized Gradient Approximation Made Simple
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High-throughput identification of spin-photon interfaces in silicon
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Engineering telecom single-photon emitters in silicon for scalable quantum photonics
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August 2020 |
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Formation of NV centers in diamond by a femtosecond laser single pulse
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January 2023 |
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Waveguide-integrated silicon T centres
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April 2023 |
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Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing
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February 2023 |
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Defect-Induced Photoluminescence from Pulsed Laser Annealed Si
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January 1980 |
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Laser Induced Damage Threshold of Silicon with Native and Artificial sio2 Layer
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Ultrafast Laser Processing of Diamond Materials: A Review
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December 2021 |