Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform

Yama, Nicholas; Chen, I-Tung; Chakravarthi, Srivatsa; Li, Bingzhao; Pederson, Christian; Matthews, Bethany E.; Spurgeon, Steven R.; Perea, Daniel E.; Wirth, Mark G.; Sushko, Petr V.; Li, Mo; Fu, Kai-Mei C.

doi:10.1002/adma.202305434

Title: Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform

Journal Article · Sun Sep 03 00:00:00 UTC 2023 · Advanced Materials

DOI: https://doi.org/10.1002/adma.202305434 · OSTI ID:2331409

^[1]; Chen, I-Tung ^[1]; Chakravarthi, Srivatsa ^[1]; Li, Bingzhao ^[1]; Pederson, Christian ^[1]; Matthews, Bethany E. ^[2];

^[3];

^[4]; Wirth, Mark G. ^[4];

^[2]; Li, Mo ^[1]; Fu, Kai-Mei C. ^[5]

University of Washington, Seattle, WA (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States); University of Washington, Seattle, WA (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)
University of Washington, Seattle, WA (United States); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide bandgap, strong nonlinear properties, and large acousto-optic figure of merit. Here, this study demonstrates that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths, respectively. It further demonstrates the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations, indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.

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Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States); Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE Office of Science (SC), Biological and Environmental Research (BER)

Grant/Contract Number:: AC02-05CH11231; AC05-76RL01830; SC0012704

OSTI ID:: 2331409

Report Number(s):: PNNL-SA--185419

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 5 Vol. 36; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
acousto-optics
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integrated photonics
latticed-matched

Title: Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform

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