AlGaN High Electron Mobility Transistor for High-Temperature Logic

Klein, Brianna Alexandra; Allerman, Andrew A.; Baca, Albert G.; Nordquist, Christopher; Armstrong, Andrew; Van Heukelom, Michael; Rice, Anthony; Patel, Victor Jay; Rosprim, Mary; Caravello, Lisa N.; Cox, Rebecca Nichole; Pipkin, Jennifer Regina; Abate, Vincent M.; Kaplar, Robert

doi:10.4071/imaps.1832996

Title: AlGaN High Electron Mobility Transistor for High-Temperature Logic

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Abstract

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer withmore »« less

Authors:

Klein, Brianna Alexandra ^[1]; Allerman, Andrew A. ^[1]; Baca, Albert G. ^[1]; Nordquist, Christopher ^[1]; Armstrong, Andrew ^[1]; Van Heukelom, Michael ^[1]; Rice, Anthony ^[1]; Patel, Victor Jay ^[1]; Rosprim, Mary ^[1]; Caravello, Lisa N. ^[1]; Cox, Rebecca Nichole ^[1]; Pipkin, Jennifer Regina ^[1]; Abate, Vincent M. ^[1]; Kaplar, Robert ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Sun Jan 29 00:00:00 EST 2023

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program

OSTI Identifier:: 2311662

Report Number(s):: SAND-2023-05628J
Journal ID: ISSN 1551-4897

Grant/Contract Number:: NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Microelectronics and Electronic Packaging

Additional Journal Information:: Journal Volume: 20; Journal Issue: 1; Journal ID: ISSN 1551-4897

Publisher:: International Microelectronics And Packaging Society (IMAPS)

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; AlGaN; III-N; HEMT; high-temperature electronics

Citation Formats


                    Klein, Brianna Alexandra, Allerman, Andrew A., Baca, Albert G., Nordquist, Christopher, Armstrong, Andrew, Van Heukelom, Michael, Rice, Anthony, Patel, Victor Jay, Rosprim, Mary, Caravello, Lisa N., Cox, Rebecca Nichole, Pipkin, Jennifer Regina, Abate, Vincent M., and Kaplar, Robert. AlGaN High Electron Mobility Transistor for High-Temperature Logic.  United States: N. p., 2023. 
Web.  doi:10.4071/imaps.1832996.

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                    Klein, Brianna Alexandra, Allerman, Andrew A., Baca, Albert G., Nordquist, Christopher, Armstrong, Andrew, Van Heukelom, Michael, Rice, Anthony, Patel, Victor Jay, Rosprim, Mary, Caravello, Lisa N., Cox, Rebecca Nichole, Pipkin, Jennifer Regina, Abate, Vincent M., & Kaplar, Robert. AlGaN High Electron Mobility Transistor for High-Temperature Logic.  United States.  https://doi.org/10.4071/imaps.1832996

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                    Klein, Brianna Alexandra, Allerman, Andrew A., Baca, Albert G., Nordquist, Christopher, Armstrong, Andrew, Van Heukelom, Michael, Rice, Anthony, Patel, Victor Jay, Rosprim, Mary, Caravello, Lisa N., Cox, Rebecca Nichole, Pipkin, Jennifer Regina, Abate, Vincent M., and Kaplar, Robert. Sun .  
"AlGaN High Electron Mobility Transistor for High-Temperature Logic".  United States.  https://doi.org/10.4071/imaps.1832996.  https://www.osti.gov/servlets/purl/2311662.

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@article{osti_2311662,

  title        = {AlGaN High Electron Mobility Transistor for High-Temperature Logic},

  author       = {Klein, Brianna Alexandra and Allerman, Andrew A. and Baca, Albert G. and Nordquist, Christopher and Armstrong, Andrew and Van Heukelom, Michael and Rice, Anthony and Patel, Victor Jay and Rosprim, Mary and Caravello, Lisa N. and Cox, Rebecca Nichole and Pipkin, Jennifer Regina and Abate, Vincent M. and Kaplar, Robert},

  abstractNote = {Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.},

  doi          = {10.4071/imaps.1832996},

  journal      = {Journal of Microelectronics and Electronic Packaging},

  number       = 1,

  volume       = 20,

  place        = {United States},

  year         = {Sun Jan 29 00:00:00 EST 2023},

  month        = {Sun Jan 29 00:00:00 EST 2023}

}

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