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Title: Evolution of dislocation loops and voids in post-irradiation annealed ThO2: A combined in-situ TEM and cluster dynamics investigation

Abstract

The effect of isochronal annealing on the evolution of dislocation loop and void population in proton irradiated ThO2 has been investigated. Post-irradiation annealing in other actinide oxides like UO2 shows significant loop coarsening. ThO2 samples were irradiated with 2 MeV protons up to a dose of 0.1 dpa at 600°C. Post-irradiation isochronal annealing was performed at 600, 800, 1000 and 1100°C for 1 h at each temperature using in-situ TEM. Only faulted 1/3<111> type dislocation loops were observed, and their sizes and distribution were characterized. Further, the population of self-interstitial atom (SIA) dislocation loops did not show any significant growth and coarsening. Additionally, nanometric voids were observed at annealing temperatures of 1000 and 1100°C. Using cluster dynamics (CD), we have studied the nucleation and growth of point defects and defect clusters, i.e., SIA prismatic dislocation loops and nanometric and sub-nanometric voids in proton irradiated ThO2. The CD model was further utilized to predict the growth and coarsening of loops and voids during isochronal annealing at the experimental and higher temperatures. The model did not predict significant SIA loop growth which closely corresponds to the TEM observations. CD predicted SIA loop coarsening is insignificant even at high annealing temperature of 1500°Cmore » because the model only considers the growth of defect clusters by absorption of like point defects, i.e., SIA loops absorb interstitials and voids absorb vacancies, and cannot account for their migration and coalescence due to elastic interaction. The CD model also predicts the evolution of nanometric voids having mean size within the error bounds of TEM observations.« less

Authors:
 [1];  [2];  [3]; ORCiD logo [4];  [4];  [5];  [1]
  1. Purdue Univ., West Lafayette, IN (United States)
  2. Idaho National Laboratory (INL), Idaho Falls, ID (United States)
  3. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
  4. Texas A & M Univ., College Station, TX (United States)
  5. North Carolina State University, Raleigh, NC (United States); Idaho National Laboratory (INL), Idaho Falls, ID (United States)
Publication Date:
Research Org.:
Idaho National Laboratory (INL), Idaho Falls, ID (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Thermal Energy Transport under Irradiation (TETI)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
2290348
Alternate Identifier(s):
OSTI ID: 1996892
Report Number(s):
INL/JOU-23-72078-Rev000
Journal ID: ISSN 0022-3115
Grant/Contract Number:  
AC07-05ID14517
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 586; Journal Issue: -; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; In-situ TEM; Annealing; Irradiation induced defects; Cluster dynamics simulations; Dislocation loops; Voids; Thorium dioxide; Post-irradiation annealing; Loop coarsening; Void growth; Cluster dynamics; Interstitials and vacancies

Citation Formats

Mazumder, Sanjoy Kumar, Bawane, Kaustubh Krishna, Mann, J. Matthew, French, Aaron, Shao, Lin, He, Lingfeng, and El-Azab, Anter. Evolution of dislocation loops and voids in post-irradiation annealed ThO2: A combined in-situ TEM and cluster dynamics investigation. United States: N. p., 2023. Web. doi:10.1016/j.jnucmat.2023.154686.
Mazumder, Sanjoy Kumar, Bawane, Kaustubh Krishna, Mann, J. Matthew, French, Aaron, Shao, Lin, He, Lingfeng, & El-Azab, Anter. Evolution of dislocation loops and voids in post-irradiation annealed ThO2: A combined in-situ TEM and cluster dynamics investigation. United States. https://doi.org/10.1016/j.jnucmat.2023.154686
Mazumder, Sanjoy Kumar, Bawane, Kaustubh Krishna, Mann, J. Matthew, French, Aaron, Shao, Lin, He, Lingfeng, and El-Azab, Anter. Wed . "Evolution of dislocation loops and voids in post-irradiation annealed ThO2: A combined in-situ TEM and cluster dynamics investigation". United States. https://doi.org/10.1016/j.jnucmat.2023.154686.
@article{osti_2290348,
title = {Evolution of dislocation loops and voids in post-irradiation annealed ThO2: A combined in-situ TEM and cluster dynamics investigation},
author = {Mazumder, Sanjoy Kumar and Bawane, Kaustubh Krishna and Mann, J. Matthew and French, Aaron and Shao, Lin and He, Lingfeng and El-Azab, Anter},
abstractNote = {The effect of isochronal annealing on the evolution of dislocation loop and void population in proton irradiated ThO2 has been investigated. Post-irradiation annealing in other actinide oxides like UO2 shows significant loop coarsening. ThO2 samples were irradiated with 2 MeV protons up to a dose of 0.1 dpa at 600°C. Post-irradiation isochronal annealing was performed at 600, 800, 1000 and 1100°C for 1 h at each temperature using in-situ TEM. Only faulted 1/3<111> type dislocation loops were observed, and their sizes and distribution were characterized. Further, the population of self-interstitial atom (SIA) dislocation loops did not show any significant growth and coarsening. Additionally, nanometric voids were observed at annealing temperatures of 1000 and 1100°C. Using cluster dynamics (CD), we have studied the nucleation and growth of point defects and defect clusters, i.e., SIA prismatic dislocation loops and nanometric and sub-nanometric voids in proton irradiated ThO2. The CD model was further utilized to predict the growth and coarsening of loops and voids during isochronal annealing at the experimental and higher temperatures. The model did not predict significant SIA loop growth which closely corresponds to the TEM observations. CD predicted SIA loop coarsening is insignificant even at high annealing temperature of 1500°C because the model only considers the growth of defect clusters by absorption of like point defects, i.e., SIA loops absorb interstitials and voids absorb vacancies, and cannot account for their migration and coalescence due to elastic interaction. The CD model also predicts the evolution of nanometric voids having mean size within the error bounds of TEM observations.},
doi = {10.1016/j.jnucmat.2023.154686},
journal = {Journal of Nuclear Materials},
number = -,
volume = 586,
place = {United States},
year = {Wed Aug 16 00:00:00 EDT 2023},
month = {Wed Aug 16 00:00:00 EDT 2023}
}

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