Distribution of Copper States, Phases, and Defects across the Depth of a Cu-Doped CdTe Solar Cell

Rojsatien, Srisuda; Mannodi-Kanakkithodi, Arun; Walker, Trumann; Mohan Kumar, Niranjana; Nietzold, Tara; Colegrove, Eric; Mao, Dan; Stuckelberger, Michael E.; Lai, Barry; Cai, Zhonghou; Chan, Maria Y.; Bertoni, Mariana I.

doi:10.1021/acs.chemmater.3c01688

Title: Distribution of Copper States, Phases, and Defects across the Depth of a Cu-Doped CdTe Solar Cell

Journal Article · Tue Nov 21 00:00:00 UTC 2023 · Chemistry of Materials

DOI: https://doi.org/10.1021/acs.chemmater.3c01688 · OSTI ID:2281544

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^[1]; Mohan Kumar, Niranjana ^[1];

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^[3]; Mao, Dan ^[4];

^[5]; Lai, Barry ^[6]; Cai, Zhonghou ^[7];

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Arizona State University, Tempe, AZ (United States)
Purdue University, West Lafayette, IN (United States); Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
First Solar, Perrysburg, OH (United States)
Deutsches Elektronen-Synchrotron DESY, Hamburg (Germany)
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM); Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)

Copper has been used as a p-type dopant in cadmium telluride (CdTe) for decades. However, the density of Cu atoms in the finished device is much higher than that of holes, which means that most Cu atoms are not activated as acceptors during incorporation. Furthermore, studies have demonstrated that the distribution of copper (Cu) atoms across the device is highly inhomogeneous, with reports citing Cu substitution on Cd sites and segregation to grain boundaries. Fast diffusion along these boundaries and Cu accumulation at the CdTe/CdS interface have also been observed and validated computationally. These levels of inhomogeneity make it difficult to accurately characterize and correlate the performance with the nature of the Cu atomic species present. To address this challenge, we utilize X-ray microscopy and, specifically, nanoscale fluorescence-mode X-ray absorption near-edge structure to resolve the atomic Cu environment throughout the depth of the CdTe layer. Our results suggest that the majority of Cu atoms are in the form of Cu_xTe phases (or similar local environments) near the ZnTe|CdTe interface, Cu_xO phases in the CdTe absorber, and present in various oxidation states, including Cu¹⁺ and Cu²⁺, near the CdS/CdTe junction. Here this work also provides experimental evidence for the first time of the presence of CuS around the ZnTe|CdTe interface and the hypothesized Cu_Cd-Cl_i complex in the CdTe absorber.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; AC36-08GO28308; EE0008163; EE0008754

OSTI ID:: 2281544

Report Number(s):: NREL/JA--5K00-86352; MainId:87125; UUID:5ff4909a-8dac-4daf-87f1-0a92892636d9; MainAdminID:71552

Journal Information:: Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 23 Vol. 35; ISSN 0897-4756

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Distribution of Copper States, Phases, and Defects across the Depth of a Cu-Doped CdTe Solar Cell

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