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Hydrogen Stability and Bonding in SiNx and Al2O3 Dielectric Stacks on Poly-Si/SiOx Passivating Contacts
Abstract
Polycrystalline Si on SiOx passivating contacts enables some of the highest efficiency single-junction Si photovoltaic devices, but the high-temperature firing process needed for industrial metallization can significantly reduce passivation. We show that after firing, the implied open-circuit voltage, iVoc, for the Al2O3/SiNx/poly-Si/SiOx/c-Si stack is 20-30 mV higher than the SiNx/Al2O3/poly-Si/SiOx/c-Si stack and therefore provides better passivation of the SiOx/c-Si interface. Using effusion measurements and Fourier transform infrared spectroscopy, we demonstrate that more than twice as much hydrogen is retained in the dielectric up to the peak firing temperature of ~800 degrees C for Al2O3-capped structures. If the Al2O3 layer is not present in the stack, after firing, the iVoc is lower by 50-100 mV compared to Al2O3/SiNx or SiNx/Al2O3 stacks. These studies will inform future work on the role of dielectrics in aiding the passivation of poly-Si/SiOx passivating contacts.
- Authors:
-
[1];
[2];
[1]
- Colorado School of Mines, Golden, CO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1993046
- Report Number(s):
- NREL/JA-5900-85901
Journal ID: ISSN 2574-0962; MainId:86674;UUID:fa6dafd2-d1ad-4989-a333-18c3d4eb6727;MainAdminID:69796
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Energy Materials
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 13; Journal ID: ISSN 2574-0962
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 08 HYDROGEN; Al2O3; dielectric stacks; hydrogen stability; passivating contacts; photovoltaic; poly-Si/SiOx; PV; SiNx; silicon photovoltaics; passivating; contacts; fast-firing; hydrogen effusion; FTIR
Citation Formats
Hartenstein, Matthew B., Nemeth, William, Young, David L., Stradins, Paul, and Agarwal, Sumit. Hydrogen Stability and Bonding in SiNx and Al2O3 Dielectric Stacks on Poly-Si/SiOx Passivating Contacts. United States: N. p., 2023.
Web. doi:10.1021/acsaem.3c00937.
Hartenstein, Matthew B., Nemeth, William, Young, David L., Stradins, Paul, & Agarwal, Sumit. Hydrogen Stability and Bonding in SiNx and Al2O3 Dielectric Stacks on Poly-Si/SiOx Passivating Contacts. United States. https://doi.org/10.1021/acsaem.3c00937
Hartenstein, Matthew B., Nemeth, William, Young, David L., Stradins, Paul, and Agarwal, Sumit. Tue .
"Hydrogen Stability and Bonding in SiNx and Al2O3 Dielectric Stacks on Poly-Si/SiOx Passivating Contacts". United States. https://doi.org/10.1021/acsaem.3c00937.
@article{osti_1993046,
title = {Hydrogen Stability and Bonding in SiNx and Al2O3 Dielectric Stacks on Poly-Si/SiOx Passivating Contacts},
author = {Hartenstein, Matthew B. and Nemeth, William and Young, David L. and Stradins, Paul and Agarwal, Sumit},
abstractNote = {Polycrystalline Si on SiOx passivating contacts enables some of the highest efficiency single-junction Si photovoltaic devices, but the high-temperature firing process needed for industrial metallization can significantly reduce passivation. We show that after firing, the implied open-circuit voltage, iVoc, for the Al2O3/SiNx/poly-Si/SiOx/c-Si stack is 20-30 mV higher than the SiNx/Al2O3/poly-Si/SiOx/c-Si stack and therefore provides better passivation of the SiOx/c-Si interface. Using effusion measurements and Fourier transform infrared spectroscopy, we demonstrate that more than twice as much hydrogen is retained in the dielectric up to the peak firing temperature of ~800 degrees C for Al2O3-capped structures. If the Al2O3 layer is not present in the stack, after firing, the iVoc is lower by 50-100 mV compared to Al2O3/SiNx or SiNx/Al2O3 stacks. These studies will inform future work on the role of dielectrics in aiding the passivation of poly-Si/SiOx passivating contacts.},
doi = {10.1021/acsaem.3c00937},
journal = {ACS Applied Energy Materials},
number = 13,
volume = 6,
place = {United States},
year = {Tue Jun 27 00:00:00 EDT 2023},
month = {Tue Jun 27 00:00:00 EDT 2023}
}
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