Vapor deposition rate modifies anisotropic glassy structure of an anthracene-based organic semiconductor

Bishop, Camille; Bagchi, Kushal; Toney, Michael F.; Ediger, M. D.

doi:10.1063/5.0074092

Title: Vapor deposition rate modifies anisotropic glassy structure of an anthracene-based organic semiconductor

Journal Article · 03 January 2022 · Journal of Chemical Physics

DOI: https://doi.org/10.1063/5.0074092 · OSTI ID:1982367

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Univ. of Wisconsin, Madison, WI (United States)
Univ. of Colorado, Boulder, CO (United States)

We control the anisotropic molecular packing of vapor-deposited glasses of ABH113, a deuterated anthracene derivative with promise for future organic light emitting diode materials, by changing the deposition rate and substrate temperature at which they are prepared. We find that at substrate temperatures from 0.65 T_g to 0.92 T_g, the deposition rate significantly modifies the orientational order in the vapor-deposited glasses as characterized by x-ray scattering and birefringence. Both measures of anisotropic order can be described by a single deposition rate–substrate temperature superposition (RTS). This supports the applicability of the surface equilibration mechanism and generalizes the RTS principle from previous model systems with liquid crystalline order to non-mesogenic organic semiconductors. We find that vapordeposited glasses of ABH113 have significantly enhanced density and thermal stability compared to their counterparts prepared by liquidcooling. For organic semiconductors, the results of this study provide an efficient guide for using the deposition rate to prepare stable glasses with controlled molecular packing.

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Research Organization:: SLAC National Accelerator Laboratory, Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); NSF

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1982367

Journal Information:: Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 1 Vol. 156; ISSN 0021-9606

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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