Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths
Abstract
Here, we present a telecommunication-compatible bias-free photoconductive terahertz emitter composed of a bilayer InAs structure directly grown on a high-resistivity silicon substrate. The bilayer InAs structure includes p+-doped and undoped InAs layers, inducing a strong built-in electric field that enables terahertz generation without requiring any external bias voltage. A large-area plasmonic nanoantenna array is used to enhance and confine optical generation inside the photoconductive region with the highest built-in electric field, leading to the generation of a strong ultrafast photocurrent and broadband terahertz radiation. Thanks to a higher terahertz transmission through the silicon substrate and a shorter carrier lifetime in the InAs layers grown on silicon, higher signal-to-noise ratios are achieved at high terahertz frequencies compared with previously demonstrated bias-free terahertz emitters realized on GaAs. In addition to compatibility with silicon integrated optoelectronic platforms, the presented bias-free photoconductive emitter provides more than a 6 THz radiation bandwidth with more than 100 dB dynamic range when used in a terahertz time-domain spectroscopy system.
- Publication Date:
- Research Org.:
- Univ. of California, Los Angeles, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); US Department of the Navy, Office of Naval Research (ONR)
- OSTI Identifier:
- 1979118
- Alternate Identifier(s):
- OSTI ID: 1874402; OSTI ID: 2001453
- Grant/Contract Number:
- SC0016925; N000141912052
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 26; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; physics
Citation Formats
Lu, Ping-Keng, Jiang, Xinghe, Zhao, Yifan, Turan, Deniz, and Jarrahi, Mona. Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths. United States: N. p., 2022.
Web. doi:10.1063/5.0098340.
Lu, Ping-Keng, Jiang, Xinghe, Zhao, Yifan, Turan, Deniz, & Jarrahi, Mona. Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths. United States. https://doi.org/10.1063/5.0098340
Lu, Ping-Keng, Jiang, Xinghe, Zhao, Yifan, Turan, Deniz, and Jarrahi, Mona. Wed .
"Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths". United States. https://doi.org/10.1063/5.0098340. https://www.osti.gov/servlets/purl/1979118.
@article{osti_1979118,
title = {Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths},
author = {Lu, Ping-Keng and Jiang, Xinghe and Zhao, Yifan and Turan, Deniz and Jarrahi, Mona},
abstractNote = {Here, we present a telecommunication-compatible bias-free photoconductive terahertz emitter composed of a bilayer InAs structure directly grown on a high-resistivity silicon substrate. The bilayer InAs structure includes p+-doped and undoped InAs layers, inducing a strong built-in electric field that enables terahertz generation without requiring any external bias voltage. A large-area plasmonic nanoantenna array is used to enhance and confine optical generation inside the photoconductive region with the highest built-in electric field, leading to the generation of a strong ultrafast photocurrent and broadband terahertz radiation. Thanks to a higher terahertz transmission through the silicon substrate and a shorter carrier lifetime in the InAs layers grown on silicon, higher signal-to-noise ratios are achieved at high terahertz frequencies compared with previously demonstrated bias-free terahertz emitters realized on GaAs. In addition to compatibility with silicon integrated optoelectronic platforms, the presented bias-free photoconductive emitter provides more than a 6 THz radiation bandwidth with more than 100 dB dynamic range when used in a terahertz time-domain spectroscopy system.},
doi = {10.1063/5.0098340},
journal = {Applied Physics Letters},
number = 26,
volume = 120,
place = {United States},
year = {Wed Jun 29 00:00:00 EDT 2022},
month = {Wed Jun 29 00:00:00 EDT 2022}
}
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