Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors
Abstract
Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on themore »
- Authors:
-
- Electrical and Computer Engineering Department , University of California , Los Angeles , CA , USA
- Department of Electrical Engineering and Information Technology , Technical University Darmstadt , Darmstadt , Germany
- Department of Physics , Freie Universität Berlin , 14195 Berlin , Germany
- Department of Physics , Freie Universität Berlin , 14195 Berlin , Germany, Department of Physical Chemistry , Fritz Haber Institute of the Max Planck Society , 14195 Berlin , Germany
- Publication Date:
- Research Org.:
- Univ. of California, Los Angeles, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); German Research Foundation (DFG); European Union H2020
- OSTI Identifier:
- 1969769
- Alternate Identifier(s):
- OSTI ID: 1980998; OSTI ID: 2001455
- Grant/Contract Number:
- SC0016925; 681917; 863155
- Resource Type:
- Published Article
- Journal Name:
- Nanophotonics (Online)
- Additional Journal Information:
- Journal Name: Nanophotonics (Online) Journal Volume: 11 Journal Issue: 11; Journal ID: ISSN 2192-8614
- Publisher:
- Walter de Gruyter GmbH
- Country of Publication:
- Germany
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; terahertz detectors; terahertz emitters; ultrafast carrier dynamics
Citation Formats
Lu, Ping-Keng, Fernandez Olvera, Anuar de Jesus, Turan, Deniz, Seifert, Tom Sebastian, Yardimci, Nezih Tolga, Kampfrath, Tobias, Preu, Sascha, and Jarrahi, Mona. Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors. Germany: N. p., 2022.
Web. doi:10.1515/nanoph-2021-0785.
Lu, Ping-Keng, Fernandez Olvera, Anuar de Jesus, Turan, Deniz, Seifert, Tom Sebastian, Yardimci, Nezih Tolga, Kampfrath, Tobias, Preu, Sascha, & Jarrahi, Mona. Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors. Germany. https://doi.org/10.1515/nanoph-2021-0785
Lu, Ping-Keng, Fernandez Olvera, Anuar de Jesus, Turan, Deniz, Seifert, Tom Sebastian, Yardimci, Nezih Tolga, Kampfrath, Tobias, Preu, Sascha, and Jarrahi, Mona. Fri .
"Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors". Germany. https://doi.org/10.1515/nanoph-2021-0785.
@article{osti_1969769,
title = {Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors},
author = {Lu, Ping-Keng and Fernandez Olvera, Anuar de Jesus and Turan, Deniz and Seifert, Tom Sebastian and Yardimci, Nezih Tolga and Kampfrath, Tobias and Preu, Sascha and Jarrahi, Mona},
abstractNote = {Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.},
doi = {10.1515/nanoph-2021-0785},
journal = {Nanophotonics (Online)},
number = 11,
volume = 11,
place = {Germany},
year = {Fri Jan 14 00:00:00 EST 2022},
month = {Fri Jan 14 00:00:00 EST 2022}
}
https://doi.org/10.1515/nanoph-2021-0785
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