Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K0.5Na0.5NbO3 epitaxial thin films with superdomain structures
Abstract
Size effects of mesoscale ferroelectric domains on the macroscopic dielectric and piezoelectric responses in domain-engineered bulk piezocrystals have been extensively studied for more than two decades. However, less is known about the domain size effects in ferroelectric epitaxial thin films, especially for films consisting of low-symmetry ferroelectric phases and exhibits hierarchical superdomain structures. Herein, using phase-field simulations, we systemically evaluate the effective out-of-plane dielectric and piezoelectric coefficients, κ$$^{*}_{33}$$ and d$$^{*}_{33}$$, as a function of the domain periods for two types of superdomain structures in ferroelectric K0.5Na0.5NbO3 epitaxial thin films. In one type of the superdomain structures, we find that more than 70% increase of κ$$^{*}_{33}$$ and nearly 20% increase of d$$^{*}_{33}$$ can be achieved by tuning the domain period by a few tens of nanometers. Dissimilar behaviors are found when the domain period varies along different lateral directions, suggesting anisotropic domain size effects in thin films. By analyzing the local dielectric and piezoelectric responses from each domain variants and domain walls, we reveal that the domain size effect is governed by the variation of out-of-plane polarization inside the domains. Moreover, we also demonstrate enhanced domain size effects by modulating the misfit strains and temperature to approach the polymorphic phase boundaries, suggesting tunability of the size effect by doping and strain engineering. Furthermore, our results reveal multimodal domain size dependence of dielectric and piezoelectric responses in low-symmetry ferroelectric epitaxial thin films, implying that domain size engineering can be used to tune macroscopic properties of thin-film ferroelectrics, similar to their bulk counterparts.
- Authors:
-
- Wuhan Univ. of Technology (China)
- Pennsylvania State Univ., University Park, PA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Pennsylvania State Univ., University Park, PA (United States)
- Tsinghua Univ., Beijing (China)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
- OSTI Identifier:
- 1959681
- Report Number(s):
- LLNL-JRNL-842352
Journal ID: ISSN 1359-6454; 1064608
- Grant/Contract Number:
- AC52-07NA27344; DMR-2133373
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Acta Materialia
- Additional Journal Information:
- Journal Volume: 248; Journal ID: ISSN 1359-6454
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 36 MATERIALS SCIENCE; Ferroelectric thin film; domain structure; piezoelectric properties; dielectric properties; phase-field simulation; K0.5Na0.5NbO3
Citation Formats
Zhou, Meng-Jun, Wang, Bo, Peng, Kun, Liu, Han-Xing, Chen, Long-Qing, and Nan, Ce-Wen. Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K0.5Na0.5NbO3 epitaxial thin films with superdomain structures. United States: N. p., 2023.
Web. doi:10.1016/j.actamat.2023.118777.
Zhou, Meng-Jun, Wang, Bo, Peng, Kun, Liu, Han-Xing, Chen, Long-Qing, & Nan, Ce-Wen. Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K0.5Na0.5NbO3 epitaxial thin films with superdomain structures. United States. https://doi.org/10.1016/j.actamat.2023.118777
Zhou, Meng-Jun, Wang, Bo, Peng, Kun, Liu, Han-Xing, Chen, Long-Qing, and Nan, Ce-Wen. Mon .
"Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K0.5Na0.5NbO3 epitaxial thin films with superdomain structures". United States. https://doi.org/10.1016/j.actamat.2023.118777. https://www.osti.gov/servlets/purl/1959681.
@article{osti_1959681,
title = {Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K0.5Na0.5NbO3 epitaxial thin films with superdomain structures},
author = {Zhou, Meng-Jun and Wang, Bo and Peng, Kun and Liu, Han-Xing and Chen, Long-Qing and Nan, Ce-Wen},
abstractNote = {Size effects of mesoscale ferroelectric domains on the macroscopic dielectric and piezoelectric responses in domain-engineered bulk piezocrystals have been extensively studied for more than two decades. However, less is known about the domain size effects in ferroelectric epitaxial thin films, especially for films consisting of low-symmetry ferroelectric phases and exhibits hierarchical superdomain structures. Herein, using phase-field simulations, we systemically evaluate the effective out-of-plane dielectric and piezoelectric coefficients, κ$^{*}_{33}$ and d$^{*}_{33}$, as a function of the domain periods for two types of superdomain structures in ferroelectric K0.5Na0.5NbO3 epitaxial thin films. In one type of the superdomain structures, we find that more than 70% increase of κ$^{*}_{33}$ and nearly 20% increase of d$^{*}_{33}$ can be achieved by tuning the domain period by a few tens of nanometers. Dissimilar behaviors are found when the domain period varies along different lateral directions, suggesting anisotropic domain size effects in thin films. By analyzing the local dielectric and piezoelectric responses from each domain variants and domain walls, we reveal that the domain size effect is governed by the variation of out-of-plane polarization inside the domains. Moreover, we also demonstrate enhanced domain size effects by modulating the misfit strains and temperature to approach the polymorphic phase boundaries, suggesting tunability of the size effect by doping and strain engineering. Furthermore, our results reveal multimodal domain size dependence of dielectric and piezoelectric responses in low-symmetry ferroelectric epitaxial thin films, implying that domain size engineering can be used to tune macroscopic properties of thin-film ferroelectrics, similar to their bulk counterparts.},
doi = {10.1016/j.actamat.2023.118777},
journal = {Acta Materialia},
number = ,
volume = 248,
place = {United States},
year = {Mon Feb 13 00:00:00 EST 2023},
month = {Mon Feb 13 00:00:00 EST 2023}
}
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