Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

Hudait, Mantu K.; Johnston, Steven W.; Meeker, Michael; Khodaparast, Giti A.

doi:10.1039/d2tc03443c

Title: Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

Journal Article · Fri Nov 04 00:00:00 UTC 2022 · Journal of Materials Chemistry C

DOI: https://doi.org/10.1039/d2tc03443c · OSTI ID:1905806

^[1];

^[2]; Meeker, Michael ^[1];

^[1]

Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Heterostructures with two dissimilar materials could offer unprecedented properties if one can carefully synthesize these heterostructures with atomically smooth interfaces and reduced number of recombination centers. InAs/GaSb-based heterostructures have technological importance for long wavelength infrared photodetectors if one can synthesize these materials with high-optical quality and high-carrier lifetime. In this work, the InAs/GaSb heterostructures with a different number of heterointerfaces and growth conditions were grown by solid source molecular beam epitaxy using valved cracker sources for both arsenic and antimony. Precise control of growth parameters and shutter sequences enabled abrupt InAs/GaSb heterointerfaces, as supported by a high-resolution transmission electron microscopic study. The temperature and power-dependent optical properties by photoluminescence (PL) spectroscopic analysis of InAs/GaSb heterostructures with 4 and 28 heterointerfaces displayed donor to the acceptor and the exciton bound to complex defects (V_GaGa_Sb)⁰. Since the optical transition in PL measurements serves to determine the quality of the material, and the observed excitonic transitions from these InAs/GaSb heterostructures is an indication of high-quality materials. The high-carrier lifetimes of 139 ns to 185 ns from InAs/GaSb heterostructures were measured using microwave photoconductivity decay (μ-PCD) technique at room temperature. The observed increase in carrier lifetime is due to the decreasing number of Ga-related carrier recombination centers or defect complexes. This is further supported by the PL spectroscopic study. In addition, the carrier lifetime with different injection levels is supported by Shockley–Read–Hall recombination. We report these InAs/GaSb heterostructures with high-optical quality and high-carrier lifetimes would offer a path for the development of high-performance infrared photodetectors.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); L. C. Hassinger Fellowship; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1905806

Report Number(s):: NREL/JA-5K00-83688; MainId:84461; UUID:3410b849-6210-4941-90c2-25ac47d73bcb; MainAdminID:68280

Journal Information:: Journal of Materials Chemistry C, Journal Name: Journal of Materials Chemistry C Journal Issue: 47 Vol. 10; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

References (57)

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors Alshahrani, Dhafer O.; Kesaria, Manoj; Anyebe, Ezekiel A. Advanced Photonics Research, Vol. 3, Issue 2 https://doi.org/10.1002/adpr.202100094	journal	December 2021
Luminescence and photoconductivity of undoped p-GaSb Jakowetz, W.; Rühle, W.; Breuninger, K. Physica Status Solidi (a), Vol. 12, Issue 1 https://doi.org/10.1002/pssa.2210120117	journal	July 1972
Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions Feenstra, R. M.; Collins, D. A.; McGill, T. C. Superlattices and Microstructures, Vol. 15, Issue 2 https://doi.org/10.1006/spmi.1994.1043	journal	March 1994
Photoluminescence studies in bulk gallium antimonide Dutta, P. S.; Koteswara Rao, K. S. R.; Bhat, H. L. Applied Physics A Materials Science and Processing, Vol. 61, Issue 2 https://doi.org/10.1007/BF01538381	journal	August 1995
Radiative lifetime in semiconductors for infrared detection Humphreys, R. G. Infrared Physics, Vol. 23, Issue 3 https://doi.org/10.1016/0020-0891(83)90031-3	journal	May 1983
Temperature dependence of the energy gap in semiconductors Varshni, Y. P. Physica, Vol. 34, Issue 1 https://doi.org/10.1016/0031-8914(67)90062-6	journal	January 1967
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Svensson, S. P.; Donetsky, D.; Wang, D. Journal of Crystal Growth, Vol. 334, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.08.030	journal	November 2011
Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si Gaubas, E.; Vanhellemont, J.; Simoen, E. Physica B: Condensed Matter, Vol. 401-402 https://doi.org/10.1016/j.physb.2007.08.151	journal	December 2007
The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review Kroemer, Herbert Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 3-4, p. 196-203 https://doi.org/10.1016/j.physe.2003.08.003	journal	January 2004
Heterointerface Engineering of Broken-Gap InAs/GaSb Multilayer Structures Liu, Jheng-Sin; Zhu, Yan; Goley, Patrick S. ACS Applied Materials & Interfaces, Vol. 7, Issue 4 https://doi.org/10.1021/am507410b	journal	January 2015
Evidence for a topological excitonic insulator in InAs/GaSb bilayers Du, Lingjie; Li, Xinwei; Lou, Wenkai Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-01988-1	journal	December 2017
Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure Hudait, M. K.; Clavel, M.; Goley, P. S. Materials Advances, Vol. 1, Issue 5 https://doi.org/10.1039/D0MA00046A	journal	January 2020
InAs/GaSb short-period superlattice injection lasers operating in 2.5 [micro sign]m–3.5 [micro sign]m mid-infrared wavelength range Deguffroy, N.; Tasco, V.; Gassenq, A. Electronics Letters, Vol. 43, Issue 23 https://doi.org/10.1049/el:20072189	journal	January 2007
Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures Baranov, A. N.; Bertru, N.; Cuminal, Y. Applied Physics Letters, Vol. 71, Issue 6 https://doi.org/10.1063/1.119629	journal	August 1997
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E. Applied Physics Letters, Vol. 95, Issue 21 https://doi.org/10.1063/1.3267103	journal	November 2009
A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy Lee, M.; Nicholas, D. J.; Singer, K. E. Journal of Applied Physics, Vol. 59, Issue 8 https://doi.org/10.1063/1.336948	journal	April 1986
Proposal for strained type II superlattice infrared detectors Smith, D. L.; Mailhiot, C. Journal of Applied Physics, Vol. 62, Issue 6 https://doi.org/10.1063/1.339468	journal	September 1987
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials Donetsky, Dmitry; Belenky, Gregory; Svensson, Stefan Applied Physics Letters, Vol. 97, Issue 5 https://doi.org/10.1063/1.3476352	journal	August 2010
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 Ali, A.; Madan, H. S.; Kirk, A. P. Applied Physics Letters, Vol. 97, Issue 14 https://doi.org/10.1063/1.3492847	journal	October 2010
Photoluminescence of high‐quality GaSb grown from Ga‐ and Sb‐rich solutions by liquid‐phase epitaxy Wu, Meng‐Chyi; Chen, Chi‐Ching Journal of Applied Physics, Vol. 72, Issue 9 https://doi.org/10.1063/1.352216	journal	November 1992
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Applied Physics Letters, Vol. 97, Issue 25 https://doi.org/10.1063/1.3529458	journal	December 2010
Photoluminescence of liquid‐phase epitaxial Te‐doped GaSb Wu, Meng‐Chyi; Chen, Chi‐Ching Journal of Applied Physics, Vol. 73, Issue 12 https://doi.org/10.1063/1.354085	journal	June 1993
Electrical and photoluminescent properties of high‐quality GaSb and AlGaSb layers grown from Sb‐rich solutions by liquid‐phase epitaxy Jiang, Wen‐Jang; Sun, Yuh‐Maoh; Wu, Meng‐Chyi Journal of Applied Physics, Vol. 77, Issue 4 https://doi.org/10.1063/1.359576	journal	February 1995
Photoluminescence study of heavy doping effects in Te-doped GaSb Bignazzi, A.; Bosacchi, A.; Magnanini, R. Journal of Applied Physics, Vol. 81, Issue 11 https://doi.org/10.1063/1.365297	journal	June 1997
The physics and technology of gallium antimonide: An emerging optoelectronic material Dutta, P. S.; Bhat, H. L.; Kumar, Vikram Journal of Applied Physics, Vol. 81, Issue 9 https://doi.org/10.1063/1.365356	journal	May 1997
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices Haugan, H. J.; Brown, G. J.; Elhamri, S. Journal of Applied Physics, Vol. 111, Issue 5 https://doi.org/10.1063/1.3693535	journal	March 2012
Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection Haugan, H. J.; Brown, G. J.; Elhamri, S. Applied Physics Letters, Vol. 101, Issue 17 https://doi.org/10.1063/1.4764015	journal	October 2012
Temperature dependence of the band gap of GaSb _1−x Bi _x alloys with 0 < x ≤ 0.042 determined by photoreflectance Kopaczek, J.; Kudrawiec, R.; Linhart, W. M. Applied Physics Letters, Vol. 103, Issue 26 https://doi.org/10.1063/1.4858967	journal	December 2013
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Applied Physics Letters, Vol. 105, Issue 2 https://doi.org/10.1063/1.4890578	journal	July 2014
Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms Höglund, L.; Ting, D. Z.; Soibel, A. Applied Physics Letters, Vol. 105, Issue 19 https://doi.org/10.1063/1.4902022	journal	November 2014
Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices Haugan, H. J.; Brown, G. J.; Olson, B. V. Applied Physics Letters, Vol. 107, Issue 13 https://doi.org/10.1063/1.4932056	journal	September 2015
Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices Lin, Zhi-Yuan; Liu, Shi; Steenbergen, Elizabeth H. Applied Physics Letters, Vol. 107, Issue 20 https://doi.org/10.1063/1.4936109	journal	November 2015
Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing Haugan, H. J.; Szmulowicz, F.; Elhamri, S. Journal of Applied Physics, Vol. 125, Issue 2 https://doi.org/10.1063/1.5066226	journal	January 2019
Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well Li, Junbin; Wu, Xiaoguang; Wang, Guowei Journal of Physics D: Applied Physics, Vol. 49, Issue 14 https://doi.org/10.1088/0022-3727/49/14/145303	journal	March 2016
Advances in mid-infrared detection and imaging: a key issues review Razeghi, Manijeh; Nguyen, Binh-Minh Reports on Progress in Physics, Vol. 77, Issue 8 https://doi.org/10.1088/0034-4885/77/8/082401	journal	August 2014
Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices Wróbel, Jarosław; Ciura, Łukasz; Motyka, Marcin Semiconductor Science and Technology, Vol. 30, Issue 11 https://doi.org/10.1088/0268-1242/30/11/115004	journal	October 2015
Thermally induced native defect transform in annealed GaSb Su, Jie; Liu, Tong; Liu, Jing-Ming Chinese Physics B, Vol. 25, Issue 7 https://doi.org/10.1088/1674-1056/25/7/077801	journal	July 2016
Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals Shen, Guiying; Zhao, Youwen; Bai, Yongbiao Journal of Semiconductors, Vol. 40, Issue 4 https://doi.org/10.1088/1674-4926/40/4/042101	journal	April 2019
Modulated Photoluminescence Mapping of Long-Wavelength Infrared InAs / GaSb Type-II Superlattice: In-Plane Optoelectronic Uniformity Chen, Xiren; Zhu, Liangqing; Zhang, Yanchao Physical Review Applied, Vol. 15, Issue 4 https://doi.org/10.1103/PhysRevApplied.15.044007	journal	April 2021
Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices Altarelli, M. Physical Review B, Vol. 28, Issue 2 https://doi.org/10.1103/PhysRevB.28.842	journal	July 1983
Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb andGa1−xInxAsySb1−y/GaSb(0.07<~x<~0.22,0.05<~y<~0.19)quaternary alloys using infrared photoreflectance Muñoz, Martín; Pollak, Fred H.; Zakia, M. B. Physical Review B, Vol. 62, Issue 24 https://doi.org/10.1103/PhysRevB.62.16600	journal	December 2000
Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells Zakharova, A.; Yen, S. T.; Chao, K. A. Physical Review B, Vol. 66, Issue 8 https://doi.org/10.1103/PhysRevB.66.085312	journal	August 2002
Evidence for Helical Edge Modes in Inverted InAs / GaSb Quantum Wells Knez, Ivan; Du, Rui-Rui; Sullivan, Gerard Physical Review Letters, Vol. 107, Issue 13 https://doi.org/10.1103/PhysRevLett.107.136603	journal	September 2011
Robust Helical Edge Transport in Gated InAs / GaSb Bilayers Du, Lingjie; Knez, Ivan; Sullivan, Gerard Physical Review Letters, Vol. 114, Issue 9 https://doi.org/10.1103/PhysRevLett.114.096802	journal	March 2015
Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy Feenstra, R. M.; Collins, D. A.; Ting, D. Z. -Y. Physical Review Letters, Vol. 72, Issue 17 https://doi.org/10.1103/PhysRevLett.72.2749	journal	April 1994
Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems Yang, M. J.; Yang, C. H.; Bennett, B. R. Physical Review Letters, Vol. 78, Issue 24 https://doi.org/10.1103/PhysRevLett.78.4613	journal	June 1997
Minigaps and Novel Giant Negative Magnetoresistance in InAs/GaSb Semimetallic Superlattices Lakrimi, M.; Khym, S.; Nicholas, R. J. Physical Review Letters, Vol. 79, Issue 16 https://doi.org/10.1103/PhysRevLett.79.3034	journal	October 1997
Origin of Antimony Segregation in GaInSb / InAs Strained-Layer Superlattices Steinshnider, J.; Harper, J.; Weimer, M. Physical Review Letters, Vol. 85, Issue 21 https://doi.org/10.1103/PhysRevLett.85.4562	journal	November 2000
Simultaneous Measurement of Minority-Carrier Lifetime in Single-Crystal CdTe Using Three Transient Decay Techniques Johnston, Steve; Zaunbrecher, Katherine; Ahrenkiel, Richard IEEE Journal of Photovoltaics, Vol. 4, Issue 5 https://doi.org/10.1109/JPHOTOV.2014.2339491	journal	September 2014
Long‐wavelength infrared detectors based on strained InAs–Ga _{1− x} In _x Sb type‐II superlattices Mailhiot, C.; Smith, D. L. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 2 https://doi.org/10.1116/1.576201	journal	March 1989
Recombination lifetime in InAs–Ga1−xInxSb superlattices Youngdale, E. R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 12, Issue 2 https://doi.org/10.1116/1.587064	journal	March 1994
Processing and Characterization of GaSb/High-k Dielectric Interfaces Hwang, Euichul; Eaton, Craig; Mujumdar, Salil ECS Transactions, Vol. 41, Issue 5 https://doi.org/10.1149/1.3630839	journal	October 2011
InAs/GaSb Type-II Superlattice Detectors Plis, Elena A. Advances in Electronics, Vol. 2014 https://doi.org/10.1155/2014/246769	journal	January 2014
Low-power tunnel field effect transistors using mixed As and Sb based heterostructures Zhu, Yan; Hudait, Mantu K. Nanotechnology Reviews, Vol. 2, Issue 6 https://doi.org/10.1515/ntrev-2012-0082	journal	December 2013
Comparison of Silicon Photoluminescence and Photoconductive Decay for Material Quality Characterization Johnston, Steven; Ahrenkiel, Richard; Dippo, Pat MRS Proceedings, Vol. 994 https://doi.org/10.1557/PROC-0994-F07-04	journal	January 2007
Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories Fang, Shuiliu; Hao, Ruiting; Zhang, Longgang Frontiers in Physics, Vol. 10 https://doi.org/10.3389/fphy.2022.822800	journal	April 2022
Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors Niu, Shouzhu; Wei, Zhipeng; Fang, Xuan Crystals, Vol. 7, Issue 11 https://doi.org/10.3390/cryst7110337	journal	November 2017

Similar Records

Spatial density profile of electrons near the LaAlO{sub 3}/SrTiO{sub 3} heterointerface revealed by time-resolved photoluminescence spectroscopy

Journal Article · Mon Apr 14 04:00:00 UTC 2014 · Applied Physics Letters · OSTI ID:22262593

Yamada, Yasuhiro; Kanemitsu, Yoshihiko; Sato, Hiroki K.; +2 more

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Journal Article · Tue Jun 28 04:00:00 UTC 2016 · Journal of Applied Physics · OSTI ID:22596667

Liu, Jheng-Sin; Clavel, Michael B.; Pandey, Rahul; +3 more

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

Technical Report · Wed Jun 09 04:00:00 UTC 2004 · OSTI ID:837455

Donetsky, D; Anikeev, S; Gu, N; +7 more

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
carrier
decay
excess
lifetime
microwave
photoconductivity

Title: Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

Citation Formats

References (57)

Similar Records

Related Subjects