Facet effects on generation-recombination currents in semiconductor laser diodes

Fenwick, W. E.; Deri, R. J.; Baxamusa, S. H.; Pope, D. L.; Boisselle, M. C.; Dutra, D. M.; Allen, N. P.; Crowley, M.; Thiagarajan, P.; Hosoda, T.

doi:10.1088/1361-6641/ac8117

Title: Facet effects on generation-recombination currents in semiconductor laser diodes

Journal Article · Wed Jul 20 00:00:00 UTC 2022 · Semiconductor Science and Technology

DOI: https://doi.org/10.1088/1361-6641/ac8117 · OSTI ID:1899432

Fenwick, W. E. ^[1]; Deri, R. J. ^[1];

^[1]; Pope, D. L. ^[1]; Boisselle, M. C. ^[1]; Dutra, D. M. ^[1]; Allen, N. P. ^[1]; Crowley, M. ^[2]; Thiagarajan, P. ^[2]; Hosoda, T. ^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Leonardo Electronics US, Inc., Tucson, AZ (United States)

The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. Here the results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1899432

Report Number(s):: LLNL-JRNL-830841; 1046855

Journal Information:: Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology Journal Issue: 9 Vol. 37; ISSN 0268-1242

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

References (24)

Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage Bou Sanayeh, Marwan; Brick, Peter; Schmid, Wolfgang Journal of Materials Science: Materials in Electronics, Vol. 19, Issue S1 https://doi.org/10.1007/s10854-007-9478-z	journal	November 2007
Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs Nolte, D. D. Solid-State Electronics, Vol. 33, Issue 2 https://doi.org/10.1016/0038-1101(90)90169-F	journal	February 1990
Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability Beister, G.; Maege, J.; Erbert, G. Solid-State Electronics, Vol. 42, Issue 11 https://doi.org/10.1016/S0038-1101(98)00178-6	journal	November 1998
Radiative and non-radiative recombination in GaAs/AlxGa1−xAs quantum wells Sermage, B.; Alexandre, F.; Beerens, J. Superlattices and Microstructures, Vol. 6, Issue 4 https://doi.org/10.1016/S0749-6036(89)80004-7	journal	January 1989
Quantum well solar cells Barnham, K. W. J.; Ballard, I.; Connolly, J. P. Physica E: Low-dimensional Systems and Nanostructures, Vol. 14, Issue 1-2 https://doi.org/10.1016/S1386-9477(02)00356-9	journal	April 2002
Minority‐carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells Hariz, A.; Dapkus, P. Daniel; Lee, H. C. Applied Physics Letters, Vol. 54, Issue 7 https://doi.org/10.1063/1.100902	journal	February 1989
Picosecond absorption dynamics of photoexcited InGaP epitaxial films Thiagarajan, P.; Schmerge, J. F.; Menoni, C. S. Applied Physics Letters, Vol. 59, Issue 1 https://doi.org/10.1063/1.105533	journal	July 1991
Surface recombination in dry etched AlGaAs/GaAs double heterostructurep‐i‐nmesa diodes Corbett, B.; Kelly, W. M. Applied Physics Letters, Vol. 62, Issue 1 https://doi.org/10.1063/1.108781	journal	January 1993
Surface recombination velocities on processed InGaPp‐njunctions Pearton, S. J.; Ren, F.; Hobson, W. S. Applied Physics Letters, Vol. 63, Issue 26 https://doi.org/10.1063/1.110064	journal	December 1993
Photoluminescence characteristics of Se‐doped GaInP/AlGaInP double heterostructures grown by metalorganic chemical vapor deposition Toda, A.; Nakano, K.; Yamamoto, T. Applied Physics Letters, Vol. 66, Issue 25 https://doi.org/10.1063/1.113771	journal	June 1995
Spatial effects on ideality factor of amorphous siliconpindiodes Kroon, M. A.; van Swaaij, R. A. C. M. M. Journal of Applied Physics, Vol. 90, Issue 2 https://doi.org/10.1063/1.1379560	journal	July 2001
The effect of surface recombination on current in Al_xGa_1−xAs heterojunctions Henry, C. H.; Logan, R. A.; Merritt, F. R. Journal of Applied Physics, Vol. 49, Issue 6 https://doi.org/10.1063/1.325265	journal	June 1978
Surface recombination in GaAs PN junction diode Mazhari, B.; Morkoç, H. Journal of Applied Physics, Vol. 73, Issue 11 https://doi.org/10.1063/1.353998	journal	June 1993
Coupled defect‐level recombination: Theory and application to anomalous diode characteristics Schenk, Andreas; Krumbein, Ulrich Journal of Applied Physics, Vol. 78, Issue 5 https://doi.org/10.1063/1.360007	journal	September 1995
Effect of quantum well location on single quantum well p-i-n photodiode dark currents Nelson, Jenny; Ballard, Ian; Barnham, Keith Journal of Applied Physics, Vol. 86, Issue 10 https://doi.org/10.1063/1.371609	journal	November 1999
Temperature dependence of diffusion length, lifetime and minority electron mobility in GaInP Schultes, F. J.; Christian, T.; Jones-Albertus, R. Applied Physics Letters, Vol. 103, Issue 24 https://doi.org/10.1063/1.4847635	journal	December 2013
Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies Lee, S. C.; Zhao, Y. F.; Schrimpf, R. D. IEEE Transactions on Nuclear Science, Vol. 46, Issue 6 https://doi.org/10.1109/23.819156	journal	December 1999
Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence Lee, Kan-Hua; Barnham, Keith W. J.; Roberts, John S. IEEE Journal of Photovoltaics, Vol. 7, Issue 3 https://doi.org/10.1109/JPHOTOV.2017.2660759	journal	May 2017
Feedback-Induced Failure of High-Power Diode Lasers Leisher, Paul O.; Li, Chen; Jha, Aman Kumar IEEE Journal of Quantum Electronics, Vol. 54, Issue 6 https://doi.org/10.1109/JQE.2018.2873073	journal	December 2018
Power Rectifiers and Transistors Hall, R. Proceedings of the IRE, Vol. 40, Issue 11 https://doi.org/10.1109/JRPROC.1952.273990	journal	November 1952
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics Sah, Chih-tang; Noyce, Robert; Shockley, William Proceedings of the IRE, Vol. 45, Issue 9 https://doi.org/10.1109/JRPROC.1957.278528	journal	September 1957
Thermoreflectance-Based Measurement of Facet Optical Absorption in High Power Diode Lasers Jha, Aman Kumar; Leisher, Paul O.; Li, Chen IEEE Photonics Technology Letters, Vol. 31, Issue 24 https://doi.org/10.1109/LPT.2019.2949281	journal	December 2019
Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes Kou, Jianquan; Shen, Chih-Chiang; Shao, Hua Optics Express, Vol. 27, Issue 12 https://doi.org/10.1364/OE.27.00A643	journal	May 2019
Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers Song, Yue; Lv, Zhiyong; Bai, Jiaming Crystals, Vol. 12, Issue 6 https://doi.org/10.3390/cryst12060765	journal	May 2022

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71 CLASSICAL AND QUANTUM MECHANICS
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laser diodes
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Title: Facet effects on generation-recombination currents in semiconductor laser diodes

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