DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structure, Stability, and Electronic Properties of Boron Suboxide: A Density Functional Theory Study

Abstract

Boron suboxide (B6O) is a boron-rich compound derived from the α-rhombohedral boron lattice with extreme hardness and unusual semiconducting properties. In this work, density functional theory (DFT) was used to show that unit cell volume, mechanical strength, band gaps, and thermodynamic stabilities of B6O were influenced by the interstitial elements and point defects at the icosahedral sites. While the hexagonal unit cell volume (HUCV) varies with interstitial occupancy, it is the icosahedral defect that weakens the intrinsic bulk modulus of B6O. Using the hybrid HSE functional, we confirmed that the perfect B6O bulk is a p-type semiconductor with a direct band gap of 2.8 eV. Furthermore, by screening α-boron compounds systematically, we found that a simple octet rule may offer a consistent explanation for the variations in the computed electronic structures. The formation free energies calculated over a wide range of temperatures (0–2500 K) and pressures (0–80 GPa) predict that formations of interstitial defects become favorable only at higher temperatures (ca. 1800 K) in bulk B6O lattices. The nudged elastic band (NEB) method was employed to identify the minimum energy pathways for the diffusions of dislocated B and O atoms. The diffusion of icosahedral B atoms has an energy barriermore » of 0.16 eV. More complex B diffusion paths involving the reorganization of icosahedral boron atoms incur higher barriers (>1 eV). In contrast, the diffusion of interstitial O atoms is facile with a barrier of 0.4 eV. Lastly, successive O insertions into the α-B lattice were performed using DFT to generate a basic understanding of the oxidation process. Furthermore, these calculations provide fundamental atomistic insights into the growth of B6O crystals and control of their point defects.« less

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [1]
  1. Kansas State Univ., Manhattan, KS (United States)
Publication Date:
Research Org.:
Kansas State Univ., Manhattan, KS (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1894427
Grant/Contract Number:  
SC0021264; AC02-05CH11231; CHE-1726332; CNS-1006860; EPS-1006860; EPS-0919443
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 126; Journal Issue: 37; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Chemical structure; Defects; Energy; Lattices; Potential energy

Citation Formats

Liu, Bin, Evans, Dylan, Deng, Hao, and Edgar, James. Structure, Stability, and Electronic Properties of Boron Suboxide: A Density Functional Theory Study. United States: N. p., 2022. Web. doi:10.1021/acs.jpcc.2c05590.
Liu, Bin, Evans, Dylan, Deng, Hao, & Edgar, James. Structure, Stability, and Electronic Properties of Boron Suboxide: A Density Functional Theory Study. United States. https://doi.org/10.1021/acs.jpcc.2c05590
Liu, Bin, Evans, Dylan, Deng, Hao, and Edgar, James. Tue . "Structure, Stability, and Electronic Properties of Boron Suboxide: A Density Functional Theory Study". United States. https://doi.org/10.1021/acs.jpcc.2c05590. https://www.osti.gov/servlets/purl/1894427.
@article{osti_1894427,
title = {Structure, Stability, and Electronic Properties of Boron Suboxide: A Density Functional Theory Study},
author = {Liu, Bin and Evans, Dylan and Deng, Hao and Edgar, James},
abstractNote = {Boron suboxide (B6O) is a boron-rich compound derived from the α-rhombohedral boron lattice with extreme hardness and unusual semiconducting properties. In this work, density functional theory (DFT) was used to show that unit cell volume, mechanical strength, band gaps, and thermodynamic stabilities of B6O were influenced by the interstitial elements and point defects at the icosahedral sites. While the hexagonal unit cell volume (HUCV) varies with interstitial occupancy, it is the icosahedral defect that weakens the intrinsic bulk modulus of B6O. Using the hybrid HSE functional, we confirmed that the perfect B6O bulk is a p-type semiconductor with a direct band gap of 2.8 eV. Furthermore, by screening α-boron compounds systematically, we found that a simple octet rule may offer a consistent explanation for the variations in the computed electronic structures. The formation free energies calculated over a wide range of temperatures (0–2500 K) and pressures (0–80 GPa) predict that formations of interstitial defects become favorable only at higher temperatures (ca. 1800 K) in bulk B6O lattices. The nudged elastic band (NEB) method was employed to identify the minimum energy pathways for the diffusions of dislocated B and O atoms. The diffusion of icosahedral B atoms has an energy barrier of 0.16 eV. More complex B diffusion paths involving the reorganization of icosahedral boron atoms incur higher barriers (>1 eV). In contrast, the diffusion of interstitial O atoms is facile with a barrier of 0.4 eV. Lastly, successive O insertions into the α-B lattice were performed using DFT to generate a basic understanding of the oxidation process. Furthermore, these calculations provide fundamental atomistic insights into the growth of B6O crystals and control of their point defects.},
doi = {10.1021/acs.jpcc.2c05590},
journal = {Journal of Physical Chemistry. C},
number = 37,
volume = 126,
place = {United States},
year = {Tue Sep 13 00:00:00 EDT 2022},
month = {Tue Sep 13 00:00:00 EDT 2022}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Melt growth and properties of B6P crystals
journal, January 1983

  • Slack, Glen A.; McNelly, T. F.; Taft, E. A.
  • Journal of Physics and Chemistry of Solids, Vol. 44, Issue 10
  • DOI: 10.1016/0022-3697(83)90151-8

Synthesis and structure of non-stoichiometric B6O
journal, July 1997


Hybrid functionals based on a screened Coulomb potential
journal, May 2003

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 118, Issue 18
  • DOI: 10.1063/1.1564060

Experimental study and critical review of structural, thermodynamic and mechanical properties of superhard refractory boron suboxide B6O
journal, December 2011


Structure refinement of the boron suboxide B6O by the Rietveld method
conference, January 1991

  • Bolmgren, H.; Lundström, T.; Okada, S.
  • AIP Conference Proceedings
  • DOI: 10.1063/1.40868

Absence of defect clusters in electron irradiated boron carbide
journal, January 1985


sumo: Command-line tools for plotting and analysis of periodic ab initio calculations
journal, August 2018

  • M. Ganose, Alex; J. Jackson, Adam; O. Scanlon, David
  • Journal of Open Source Software, Vol. 3, Issue 28
  • DOI: 10.21105/joss.00717

Some crystallography, chemistry, physics, and thermodynamics of B12O2, B12P2, B12As2, and related alpha-boron type crystals
journal, September 2014


Boron suboxide: As hard as cubic boron nitride
journal, July 2002

  • He, Duanwei; Zhao, Yusheng; Daemen, L.
  • Applied Physics Letters, Vol. 81, Issue 4
  • DOI: 10.1063/1.1494860

Growth of boron suboxide crystals in the B–B2O3 system at high pressure and high temperature
journal, February 2002

  • He, Duanwei; Akaishi, Minoru; Scott, Brian L.
  • Journal of Materials Research, Vol. 17, Issue 2
  • DOI: 10.1557/JMR.2002.0041

Self-healing in B 12 P 2 through Mediated Defect Recombination
journal, November 2016


Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188

Bonding and doping of simple icosahedral-boride semiconductors
journal, April 2004


First principles phonon calculations in materials science
journal, November 2015


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Non-stoichiometry of boron suboxide (B6O)
journal, March 1976


VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data
journal, October 2011


Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
journal, July 2013

  • Jain, Anubhav; Ong, Shyue Ping; Hautier, Geoffroy
  • APL Materials, Vol. 1, Issue 1
  • DOI: 10.1063/1.4812323

Identification and design principles of low hole effective mass p-type transparent conducting oxides
journal, August 2013

  • Hautier, Geoffroy; Miglio, Anna; Ceder, Gerbrand
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3292

Thermoelectric Properties of Hot-pressed Boron Suboxide (B6O)
journal, January 2002


Production of α-Rhombohedral Boron by Amorphous Boron Crystallization
journal, October 2000

  • Shalamberidze, S. O.; Kalandadze, G. I.; Khulelidze, D. E.
  • Journal of Solid State Chemistry, Vol. 154, Issue 1
  • DOI: 10.1006/jssc.2000.8836

B6O-Based Composite to Rival Polycrystalline Cubic Boron Nitride
journal, December 2007


The Existence and Formation of the Solid B[sub 6]O
journal, January 1962

  • Rizzo, H. F.; Simmons, W. C.; Bielstein, H. O.
  • Journal of The Electrochemical Society, Vol. 109, Issue 11
  • DOI: 10.1149/1.2425241

Ab initiomolecular dynamics for liquid metals
journal, January 1993


Hot pressing of boron suboxide B12O2
journal, March 1986


Unusual properties of icosahedral boron-rich solids
journal, September 2006


A climbing image nudged elastic band method for finding saddle points and minimum energy paths
journal, December 2000

  • Henkelman, Graeme; Uberuaga, Blas P.; Jónsson, Hannes
  • The Journal of Chemical Physics, Vol. 113, Issue 22, p. 9901-9904
  • DOI: 10.1063/1.1329672

Defect clustering and self-healing of electron-irradiated boron-rich solids
journal, May 1995


Hard boron–suboxide-based films deposited in a sputter-sourced, high-density plasma deposition system
journal, September 1997

  • Doughty, C.; Gorbatkin, S. M.; Tsui, T. Y.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 5
  • DOI: 10.1116/1.580933

Boron suboxide ultrahard materials
journal, July 2013

  • Herrmann, M.; Sigalas, I.; Thiele, M.
  • International Journal of Refractory Metals and Hard Materials, Vol. 39
  • DOI: 10.1016/j.ijrmhm.2012.02.009

Thermodynamics of impurities in semiconductors
journal, September 2004


Thermodynamic Stability of Boron:  The Role of Defects and Zero Point Motion
journal, March 2007

  • van Setten, Michiel J.; Uijttewaal, Matthé A.; de Wijs, Gilles A.
  • Journal of the American Chemical Society, Vol. 129, Issue 9
  • DOI: 10.1021/ja0631246

Electronic structure and optical properties of theB12O2crystal
journal, July 1996


Improved tetrahedron method for Brillouin-zone integrations
journal, June 1994


Icosahedral Boron‐Rich Solids
journal, January 1987


Thermal Conductivity of Boron and Some Boron Compounds
journal, September 1971


Icosahedral packing of B12 icosahedra in boron suboxide (B6O)
journal, January 1998

  • Hubert, Hervé; Devouard, Bertrand; Garvie, Laurence A. J.
  • Nature, Vol. 391, Issue 6665
  • DOI: 10.1038/34885

Crystal structure of B6O
conference, January 1991

  • Higashi, Iwami; Kobayashi, Masayoshi; Bernhard, Jonte
  • AIP Conference Proceedings
  • DOI: 10.1063/1.40870

Isotope dependencies of Raman spectra of B 12 As 2 , B 12 P 2 , B 12 O 2 , and B 1 2 + x C 3 x : Bonding of intericosahedral chains
journal, August 1997


High-Pressure, High-Temperature Synthesis and Characterization of Boron Suboxide (B6O)
journal, May 1998

  • Hubert, Hervé; Garvie, Laurence A. J.; Devouard, Bertrand
  • Chemistry of Materials, Vol. 10, Issue 6
  • DOI: 10.1021/cm970433+