Title: A Novel $$\sqrt {19} $$ × $$\sqrt {19} $$ Superstructure in Epitaxially Grown 1T–TaTe₂

Abstract

The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel $$\sqrt {19} $$ × $$\sqrt {19} $$ charge order in few-layer-thick 1T-TaTe₂ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized, is report. The photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe₂ exhibits a variety of metastable charge density wave orders, including the $$\sqrt {19} $$ × $$\sqrt {19} $$ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, it is found that only the $$\sqrt {19} $$ × $$\sqrt {19} $$ order persists in 1T-TaTe₂ films thicker than a monolayer, up to 8 layers. Furthermore, the findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.

Authors:

Hwang, Jinwoong  ^[1];

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• Search DOE PAGES for ORCID "0000-0002-9272-5257"

Jin, Yeongrok ^[2]; Zhang, Canxun ^[3]; Zhu, Tiancong ^[3]; Kim, Kyoo ^[4]; Zhong, Yong ^[5]; Lee, Ji‐Eun ^[2]; Shen, Zongqi ^[6]; Chen, Yi ^[3]; Ruan, Wei ^[7]; Ryu, Hyejin ^[8]; Hwang, Choongyu ^[2]; Lee, Jaekwang ^[9]; Crommie, Michael F. ^[3]; Mo, Sung‐Kwan  ^[10];

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Shen, Zhi‐Xun ^[11]

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1. SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Pusan National Univ., Busan (Korea, Republic of)
2. Pusan National Univ., Busan (Korea, Republic of)
3. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
4. Korea Atomic Energy Research Inst., Daejeon (South Korea)
5. SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
6. Univ. of California, Berkeley, CA (United States)
7. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Fudan Univ., Shanghai (China)
8. Korea Inst. of Science and Technology, Seoul (South Korea)
9. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Pusan National Univ., Busan (Korea, Republic of); Korea Inst. of Science and Technology, Seoul (South Korea)
10. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
11. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Menlo Park, CA (United States)

Publication Date:

Thu Jul 28 00:00:00 EDT 2022

Research Org.:

Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Korea (NRF); Korea Basic Science Institute; Korea Atomic Energy Research Institute; Kavli Energy NanoScience Institute (ENSI)

OSTI Identifier:

1888487

Alternate Identifier(s):

OSTI ID: 1882735; OSTI ID: 1885987

Grant/Contract Number:  

AC02-05CH11231; AC02-76SF00515; 2021R1A2C1004266; 2020K1A3A7A09080369; 2021R1A6C101A429; 524460-22; 2021R1A2C2014179; DE‐AC02‐76SF00515; DE‐AC02‐05CH11231

Resource Type:

Accepted Manuscript

Journal Name:

Advanced Materials

Additional Journal Information:

Journal Volume: 34; Journal Issue: 38; Journal ID: ISSN 0935-9648

Publisher:

Wiley

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; angle-resolved photoemission; charge density waves; molecular beam epitaxy; tantalum ditellurides; transition metal dichalcogenides