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Title: Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor

Abstract

Using a spatially resolved optical pump-probe experiment, we measure the lateral transport of spin-valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D electrons to a high degree of spin-valley polarization (up to 75%) using circularly polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially separated and linearly polarized probe laser. In this work, up to 25% spin-valley polarization is observed at pump-probe separations up to 20 μm. Characteristic spin-valley diffusion lengths of 18 ± 3 μm are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pumping efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [2]; ORCiD logo [2]; ORCiD logo [3];  [1]
  1. Univ. of Toulouse (France); Institut National des Sciences Appliquées de Toulouse (INSA) (France); Centre National de la Recherche Scientifique (CNRS) (France)
  2. National Institute for Materials Science (NIMS), Tsukuba (Japan)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; Agence Nationale de la Recherché (ANR); National Science Foundation (NSF); State of Florida
OSTI Identifier:
1883153
Report Number(s):
LA-UR-22-21878
Journal ID: ISSN 0031-9007
Grant/Contract Number:  
89233218CNA000001; ANR-17-EURE-0009
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 129; Journal Issue: 2; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; High Magnetic Field Science

Citation Formats

Ren, L., Lombez, L., Robert, C., Beret, D., Lagarde, D., Urbaszek, B., Renucci, P., Taniguchi, T., Watanabe, K., Crooker, Scott  A., and Marie, X. Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor. United States: N. p., 2022. Web. doi:10.1103/physrevlett.129.027402.
Ren, L., Lombez, L., Robert, C., Beret, D., Lagarde, D., Urbaszek, B., Renucci, P., Taniguchi, T., Watanabe, K., Crooker, Scott  A., & Marie, X. Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor. United States. https://doi.org/10.1103/physrevlett.129.027402
Ren, L., Lombez, L., Robert, C., Beret, D., Lagarde, D., Urbaszek, B., Renucci, P., Taniguchi, T., Watanabe, K., Crooker, Scott  A., and Marie, X. Tue . "Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor". United States. https://doi.org/10.1103/physrevlett.129.027402. https://www.osti.gov/servlets/purl/1883153.
@article{osti_1883153,
title = {Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor},
author = {Ren, L. and Lombez, L. and Robert, C. and Beret, D. and Lagarde, D. and Urbaszek, B. and Renucci, P. and Taniguchi, T. and Watanabe, K. and Crooker, Scott  A. and Marie, X.},
abstractNote = {Using a spatially resolved optical pump-probe experiment, we measure the lateral transport of spin-valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D electrons to a high degree of spin-valley polarization (up to 75%) using circularly polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially separated and linearly polarized probe laser. In this work, up to 25% spin-valley polarization is observed at pump-probe separations up to 20 μm. Characteristic spin-valley diffusion lengths of 18 ± 3 μm are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pumping efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.},
doi = {10.1103/physrevlett.129.027402},
journal = {Physical Review Letters},
number = 2,
volume = 129,
place = {United States},
year = {Tue Jul 05 00:00:00 EDT 2022},
month = {Tue Jul 05 00:00:00 EDT 2022}
}

Works referenced in this record:

Opto-Valleytronic Spin Injection in Monolayer MoS 2 /Few-Layer Graphene Hybrid Spin Valves
journal, May 2017


Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides
journal, May 2012


Two-dimensional spintronics for low-power electronics
journal, July 2019


Exciton diffusion in WSe 2 monolayers embedded in a van der Waals heterostructure
journal, April 2018

  • Cadiz, F.; Robert, C.; Courtade, E.
  • Applied Physics Letters, Vol. 112, Issue 15
  • DOI: 10.1063/1.5026478

Charged excitons in monolayer WSe 2 : Experiment and theory
journal, August 2017


Large effective mass and interaction-enhanced Zeeman splitting of K -valley electrons in MoSe 2
journal, May 2018


Long-lived spin polarization in n-doped MoSe2 monolayers
journal, August 2017

  • Schwemmer, M.; Nagler, P.; Hanninger, A.
  • Applied Physics Letters, Vol. 111, Issue 8
  • DOI: 10.1063/1.4987000

Spin Diffusion in Semiconductors
journal, May 2000


Excitonic Linewidth Approaching the Homogeneous Limit in MoS 2 -Based van der Waals Heterostructures
journal, May 2017


Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
journal, January 2011


Valley- and spin-polarized Landau levels in monolayer WSe2
journal, October 2016


Spin Lifetimes Exceeding 12 ns in Graphene Nonlocal Spin Valve Devices
journal, May 2016


Imaging of pure spin-valley diffusion current in WS 2 -WSe 2 heterostructures
journal, May 2018


Large Proximity-Induced Spin Lifetime Anisotropy in Transition-Metal Dichalcogenide/Graphene Heterostructures
journal, November 2017


Light–matter coupling and non-equilibrium dynamics of exchange-split trions in monolayer WS2
journal, July 2020

  • Zipfel, Jonas; Wagner, Koloman; Ziegler, Jonas D.
  • The Journal of Chemical Physics, Vol. 153, Issue 3
  • DOI: 10.1063/5.0012721

Drift and diffusion of spins generated by the spin Hall effect
journal, August 2007

  • Stern, N. P.; Steuerman, D. W.; Mack, S.
  • Applied Physics Letters, Vol. 91, Issue 6
  • DOI: 10.1063/1.2768633

Spin response and collective modes in simple metal dichalcogenides
journal, November 2018


Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014


Spin/valley pumping of resident electrons in WSe2 and WS2 monolayers
journal, September 2021


Measurement of Conduction and Valence Bands g -Factors in a Transition Metal Dichalcogenide Monolayer
journal, February 2021


Valley-selective circular dichroism of monolayer molybdenum disulphide
journal, January 2012

  • Cao, Ting; Wang, Gang; Han, Wenpeng
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms1882

First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS 2
journal, May 2020


Exciton Propagation and Halo Formation in Two-Dimensional Materials
journal, September 2019


Electron spin diffusion in monolayerMoS2
journal, May 2014


Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control
journal, June 2019


Colloquium : Excitons in atomically thin transition metal dichalcogenides
journal, April 2018


Exciton Diffusion and Halo Effects in Monolayer Semiconductors
journal, May 2018


Spatially-resolved measurements of spin valley polarization in MOCVD-grown monolayer WSe2
journal, May 2021

  • Batalden, Spencer; Sih, Vanessa
  • Optics Express, Vol. 29, Issue 11
  • DOI: 10.1364/OE.426664

Exciton diffusion in hBN -encapsulated monolayer MoSe2
journal, September 2020


Optical properties of charged excitons in two-dimensional semiconductors
journal, July 2020

  • Glazov, M. M.
  • The Journal of Chemical Physics, Vol. 153, Issue 3
  • DOI: 10.1063/5.0012475

Optical Measurement and Control of Spin Diffusion inn-Doped GaAs Quantum Wells
journal, September 2006


Robust optical emission polarization in MoS 2 monolayers through selective valley excitation
journal, August 2012


Lateral drag of spin coherence in gallium arsenide
journal, January 1999

  • Kikkawa, J. M.; Awschalom, D. D.
  • Nature, Vol. 397, Issue 6715
  • DOI: 10.1038/16420

Interactions and Magnetotransport through Spin-Valley Coupled Landau Levels in Monolayer MoS 2
journal, December 2018


Valley-polarized magnetic state in hole-doped monolayers of transition-metal dichalcogenides
journal, October 2018


Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe 2 Transistors
journal, January 2019


Imaging Spin Flows in Semiconductors Subject to Electric, Magnetic, and Strain Fields
journal, June 2005


Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices
journal, September 2007


Gate control of the electron spin-diffusion length in semiconductor quantum wells
journal, September 2013

  • Wang, G.; Liu, B. L.; Balocchi, A.
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3372

Dynamics of Trion Formation in In x Ga 1 x As Quantum Wells
journal, March 2009


Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride
journal, March 2021

  • Wang, Y.; Sohier, T.; Watanabe, K.
  • Applied Physics Letters, Vol. 118, Issue 10
  • DOI: 10.1063/5.0039766

Valley phonons and exciton complexes in a monolayer semiconductor
journal, January 2020


Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe 2 Monolayers
journal, September 2017


Electrical spin injection and detection in molybdenum disulfide multilayer channel
journal, April 2017

  • Liang, Shiheng; Yang, Huaiwen; Renucci, Pierre
  • Nature Communications, Vol. 8, Issue 1
  • DOI: 10.1038/ncomms14947

Imaging spin dynamics in monolayer WS 2 by time-resolved Kerr rotation microscopy
journal, November 2017

  • McCormick, Elizabeth J.; Newburger, Michael J.; Luo, Yunqiu Kelly
  • 2D Materials, Vol. 5, Issue 1
  • DOI: 10.1088/2053-1583/aa98ae

Landau-Quantized Excitonic Absorption and Luminescence in a Monolayer Valley Semiconductor
journal, March 2020


Room-temperature electrical control of exciton flux in a van der Waals heterostructure
journal, July 2018


Excitonic luminescence upconversion in a two-dimensional semiconductor
journal, December 2015

  • Jones, Aaron M.; Yu, Hongyi; Schaibley, John R.
  • Nature Physics, Vol. 12, Issue 4
  • DOI: 10.1038/nphys3604

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
journal, March 2010

  • Sasaki, T.; Oikawa, T.; Suzuki, T.
  • Applied Physics Letters, Vol. 96, Issue 12
  • DOI: 10.1063/1.3367748

Giant Paramagnetism-Induced Valley Polarization of Electrons in Charge-Tunable Monolayer MoSe 2
journal, June 2017


Observation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures
journal, July 2017


Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012


Electronic spin transport and spin precession in single graphene layers at room temperature
journal, July 2007

  • Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita
  • Nature, Vol. 448, Issue 7153, p. 571-574
  • DOI: 10.1038/nature06037