Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors
Abstract
Bi4I4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi4I4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi4I4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.
- Authors:
-
[1];
[1];
[1];
[2];
[2];
[4];
[4];
- The Ohio State Univ., Columbus, OH (United States)
- Univ. of Texas at Dallas, Richardson, TX (United States)
- Univ. of Texas at Dallas, Richardson, TX (United States); Seoul National Univ. (Korea, Republic of)
- National Institute for Materials Science (NIMS), Tsukuba (Japan)
- Rice Univ., Houston, TX (United States)
- Univ. of California, Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES), Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan; Core Research for Evolutional Science and Technology (CREST); Japan Science and Technology Agency (JST)
- OSTI Identifier:
- 1877042
- Grant/Contract Number:
- AC02-05CH11231; DMR-1922076; DMR-1921581; DMR-1945351; W911NF-18-1-0416; DMR-1921847; NSF-1921798; FA9550-19-1-0037; JP20H00354; JPMJCR15F3
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 22; Journal Issue: 3; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; quasi-1D topological insulator; Bi4X4; Josephson transistor; topological superconductivity
Citation Formats
Liu, Yulu, Chen, Ruoyu, Zhang, Zheneng, Bockrath, Marc, Lau, Chun Ning, Zhou, Yan-Feng, Yoon, Chiho, Li, Sheng, Liu, Xiaoyuan, Dhale, Nikhil, Lv, Bing, Zhang, Fan, Watanabe, Kenji, Taniguchi, Takashi, Huang, Jianwei, Yi, Ming, Oh, Ji Seop, and Birgeneau, Robert J. Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors. United States: N. p., 2022.
Web. doi:10.1021/acs.nanolett.1c04264.
Liu, Yulu, Chen, Ruoyu, Zhang, Zheneng, Bockrath, Marc, Lau, Chun Ning, Zhou, Yan-Feng, Yoon, Chiho, Li, Sheng, Liu, Xiaoyuan, Dhale, Nikhil, Lv, Bing, Zhang, Fan, Watanabe, Kenji, Taniguchi, Takashi, Huang, Jianwei, Yi, Ming, Oh, Ji Seop, & Birgeneau, Robert J. Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors. United States. https://doi.org/10.1021/acs.nanolett.1c04264
Liu, Yulu, Chen, Ruoyu, Zhang, Zheneng, Bockrath, Marc, Lau, Chun Ning, Zhou, Yan-Feng, Yoon, Chiho, Li, Sheng, Liu, Xiaoyuan, Dhale, Nikhil, Lv, Bing, Zhang, Fan, Watanabe, Kenji, Taniguchi, Takashi, Huang, Jianwei, Yi, Ming, Oh, Ji Seop, and Birgeneau, Robert J. Tue .
"Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors". United States. https://doi.org/10.1021/acs.nanolett.1c04264. https://www.osti.gov/servlets/purl/1877042.
@article{osti_1877042,
title = {Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors},
author = {Liu, Yulu and Chen, Ruoyu and Zhang, Zheneng and Bockrath, Marc and Lau, Chun Ning and Zhou, Yan-Feng and Yoon, Chiho and Li, Sheng and Liu, Xiaoyuan and Dhale, Nikhil and Lv, Bing and Zhang, Fan and Watanabe, Kenji and Taniguchi, Takashi and Huang, Jianwei and Yi, Ming and Oh, Ji Seop and Birgeneau, Robert J.},
abstractNote = {Bi4I4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi4I4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi4I4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.},
doi = {10.1021/acs.nanolett.1c04264},
journal = {Nano Letters},
number = 3,
volume = 22,
place = {United States},
year = {Tue Jan 25 00:00:00 EST 2022},
month = {Tue Jan 25 00:00:00 EST 2022}
}
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