Ultrafast photoresponse of vertically oriented TMD films probed in a vertical electrode configuration on Si chips

Järvinen, Topias; Hosseini Shokouh, Seyed-Hossein; Sainio, Sami; Pitkänen, Olli; Kordas, Krisztian

doi:10.1039/D2NA00313A

Title: Ultrafast photoresponse of vertically oriented TMD films probed in a vertical electrode configuration on Si chips

Journal Article · Fri Jul 29 00:00:00 UTC 2022 · Nanoscale Advances

DOI: https://doi.org/10.1039/D2NA00313A · OSTI ID:1875977

^[1]; Hosseini Shokouh, Seyed-Hossein ^[1]; Sainio, Sami ^[2];

^[1]; Kordas, Krisztian ^[1]

Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014 Oulu, Finland
Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014 Oulu, Finland, SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94025, USA

The probing geometry plays a decisive role in the photosensitivity and response time of vertically oriented TMD thin films.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1875977

Journal Information:: Nanoscale Advances, Journal Name: Nanoscale Advances Journal Issue: 15 Vol. 4; ISSN 2516-0230; ISSN NAADAI

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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