Focused Ion Beam Preparation of Low Melting Point Metals: Lessons Learned From Indium

Michael, Joseph R.; Perry, Daniel L.; Cummings, Damion P.; Walraven, Jeremy A.; Jordan, Matthew B.

doi:10.1017/s1431927622000496

Title: Focused Ion Beam Preparation of Low Melting Point Metals: Lessons Learned From Indium

Journal Article · Tue Mar 22 00:00:00 UTC 2022 · Microscopy and Microanalysis

DOI: https://doi.org/10.1017/s1431927622000496 · OSTI ID:1871966

^[1]; Perry, Daniel L. ^[1]; Cummings, Damion P. ^[1]; Walraven, Jeremy A. ^[1]; Jordan, Matthew B. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Indium (In) and other low melting point metals are used as interconnects in a variety of hybridized circuits and a full understanding of the metallurgy of these interconnects is important to the reliability and performance of the devices. Here, this paper shows that room temperature focused ion beam (FIB) preparation of cross-sections, using Ga⁺ or Xe⁺ can result in artifacts that obscure the true In microbump structure. The use of modified milling strategies to minimize the increased local sample temperature are shown to produce cross-sections that are representative of the In bump microstructure in some sample configurations. Furthermore, cooling of the sample to cryogenic temperatures is shown to reliably eliminate artifacts in FIB prepared cross-sections of In bumps allowing the true bump microstructure to be observed.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1871966

Report Number(s):: SAND2022-2268J; 705329

Journal Information:: Microscopy and Microanalysis, Journal Name: Microscopy and Microanalysis Journal Issue: 3 Vol. 28; ISSN 1431-9276

Publisher:: Microscopy Society of America (MSA)Copyright Statement

Country of Publication:: United States

Language:: English

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