Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Murray, Conal E.; Yan, Hanfei; Lavoie, Christian; Jordan-Sweet, Jean; Pattammattel, Ajith; Reuter, Kathleen; Hasanuzzaman, Mohammad; Lanzillo, Nicholas; Robison, Robert; Loubet, Nicolas

doi:10.1038/s44172-022-00011-w

Title: Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Journal Article · Fri Jun 10 00:00:00 UTC 2022 · Communications Engineering

DOI: https://doi.org/10.1038/s44172-022-00011-w · OSTI ID:1871858

;

; Lavoie, Christian; Jordan-Sweet, Jean; Pattammattel, Ajith; Reuter, Kathleen; Hasanuzzaman, Mohammad; Lanzillo, Nicholas; Robison, Robert; Loubet, Nicolas

Abstract The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibility inherent to these three-dimensional device geometries necessitates direct measurement of their deformation. Here we report synchrotron x-ray diffraction-based non-destructive nanoscale mapping of Si/SiGe nanosheets for gate-all-around structures. We identified two competing mechanisms at different length scales contributing to the deformation. One is consistent with the in-plane elastic relaxation due to the Ge lattice mismatch with the surrounding Si. The second is associated with the out-of-plane layering of the Si and SiGe regions at a length scale of film thickness. Complementary mechanical modeling corroborated the qualitative aspects of the deformation profiles observed across a variety of nanosheet sample widths. However, greater deformation is observed in the SiGe layers of the nanosheets than the predicted distributions. These insights could play a role in predicting carrier mobilities of future devices.

View Journal Article

Cite

Export

Save

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704

OSTI ID:: 1871858

Journal Information:: Communications Engineering, Journal Name: Communications Engineering Journal Issue: 1 Vol. 1; ISSN 2731-3395

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: Country unknown/Code not available

Language:: English

References (41)

Stress-Induced Variability Studies in Tri-Gate FinFETs with Source/Drain Stressor at 7 nm Technology Nodes Dash, T. P.; Jena, J.; Mohapatra, E. Journal of Electronic Materials, Vol. 48, Issue 8 https://doi.org/10.1007/s11664-019-07348-7	journal	June 2019
Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance Ito, Shinya; Namba, Hiroaki; Hirata, Tsuyoshi Microelectronics Reliability, Vol. 42, Issue 2 https://doi.org/10.1016/S0026-2714(01)00238-4	journal	February 2002
Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography Hill, Megan O.; Calvo-Almazan, Irene; Allain, Marc Nano Letters, Vol. 18, Issue 2 https://doi.org/10.1021/acs.nanolett.7b04024	journal	January 2018
Complete Strain Mapping of Nanosheets of Tantalum Disulfide Cao, Yue; Assefa, Tadesse; Banerjee, Soham ACS Applied Materials & Interfaces, Vol. 12, Issue 38 https://doi.org/10.1021/acsami.0c06517	journal	August 2020
Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics Gok, Abdullah; Wang, Xiaowei; Scott, Shelley ACS Applied Nano Materials, Vol. 4, Issue 6 https://doi.org/10.1021/acsanm.1c00966	journal	June 2021
Lattice Parameter and Density in Germanium-Silicon Alloys ¹ Dismukes, J. P.; Ekstrom, L.; Paff, R. J. The Journal of Physical Chemistry, Vol. 68, Issue 10 https://doi.org/10.1021/j100792a049	journal	October 1964
High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography Hruszkewycz, S. O.; Allain, M.; Holt, M. V. Nature Materials, Vol. 16, Issue 2 https://doi.org/10.1038/nmat4798	journal	November 2016
Giant piezoresistance effect in silicon nanowires He, Rongrui; Yang, Peidong Nature Nanotechnology, Vol. 1, Issue 1, p. 42-46 https://doi.org/10.1038/nnano.2006.53	journal	October 2006
The next ten years of X-ray science Yabashi, Makina; Tanaka, Hitoshi Nature Photonics, Vol. 11, Issue 1 https://doi.org/10.1038/nphoton.2016.251	journal	January 2017
Breaking the 10 nm barrier in hard-X-ray focusing Mimura, Hidekazu; Handa, Soichiro; Kimura, Takashi Nature Physics, Vol. 6, Issue 2 https://doi.org/10.1038/nphys1457	journal	November 2009
Metrology for the next generation of semiconductor devices Orji, N. G.; Badaroglu, M.; Barnes, B. M. Nature Electronics, Vol. 1, Issue 10 https://doi.org/10.1038/s41928-018-0150-9	journal	October 2018
Quantitative x-ray phase imaging at the nanoscale by multilayer Laue lenses Yan, Hanfei; Chu, Yong S.; Maser, Jörg Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep01307	journal	February 2013
Interlaced zone plate optics for hard X-ray imaging in the 10 nm range Mohacsi, Istvan; Vartiainen, Ismo; Rösner, Benedikt Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep43624	journal	March 2017
Mobility Anisotropy and Piezoresistance in Silicon p ‐Type Inversion Layers Colman, D.; Bate, R. T.; Mize, J. P. Journal of Applied Physics, Vol. 39, Issue 4 https://doi.org/10.1063/1.1656464	journal	March 1968
High-resolution strain mapping in heteroepitaxial thin-film features Murray, C. E.; Yan, H. -F.; Noyan, I. C. Journal of Applied Physics, Vol. 98, Issue 1 https://doi.org/10.1063/1.1938277	journal	July 2005
Mapping local strain in thin film/substrate systems using x-ray microdiffraction topography Yan, Hanfei; Murray, Conal E.; Noyan, I. C. Applied Physics Letters, Vol. 90, Issue 9 https://doi.org/10.1063/1.2711189	journal	February 2007
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors Sun, Y.; Thompson, S. E.; Nishida, T. Journal of Applied Physics, Vol. 101, Issue 10 https://doi.org/10.1063/1.2730561	journal	May 2007
Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures Murray, Conal E.; Saenger, K. L.; Kalenci, O. Journal of Applied Physics, Vol. 104, Issue 1 https://doi.org/10.1063/1.2952044	journal	July 2008
Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions Murray, Conal E.; Ren, Z.; Ying, A. Applied Physics Letters, Vol. 94, Issue 6 https://doi.org/10.1063/1.3079656	journal	February 2009
Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires Sekaric, Lidija; Gunawan, Oki; Majumdar, Amlan Applied Physics Letters, Vol. 95, Issue 2 https://doi.org/10.1063/1.3177331	journal	July 2009
Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography Cooper, David; Béché, Armand; Hartmann, Jean-Michel Applied Physics Letters, Vol. 96, Issue 11 https://doi.org/10.1063/1.3358149	journal	March 2010
Nanoscale silicon-on-insulator deformation induced by stressed liner structures Murray, Conal E.; Ying, A.; Polvino, S. M. Journal of Applied Physics, Vol. 109, Issue 8 https://doi.org/10.1063/1.3579421	journal	April 2011
Raman measurements of uniaxial strain in silicon nanostructures Ureña, Ferran; Olsen, Sarah H.; Raskin, Jean-Pierre Journal of Applied Physics, Vol. 114, Issue 14 https://doi.org/10.1063/1.4824291	journal	October 2013
Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography Cooper, D.; Rouviere, J.; Murray, C. E. Applied Physics Letters, Vol. 106, Issue 4 https://doi.org/10.1063/1.4906513	journal	January 2015
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction Cooper, David; Bernier, Nicolas; Rouvière, Jean-Luc Applied Physics Letters, Vol. 110, Issue 22 https://doi.org/10.1063/1.4983124	journal	May 2017
Quantification of local strain distributions in nanoscale strained SiGe FinFET structures Mochizuki, Shogo; Murray, Conal E.; Madan, Anita Journal of Applied Physics, Vol. 122, Issue 13 https://doi.org/10.1063/1.4991472	journal	October 2017
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology Reboh, S.; Coquand, R.; Barraud, S. Applied Physics Letters, Vol. 112, Issue 5 https://doi.org/10.1063/1.5010997	journal	January 2018
Strain engineering in functional materials Tsutsui, G.; Mochizuki, S.; Loubet, N. AIP Advances, Vol. 9, Issue 3 https://doi.org/10.1063/1.5075637	journal	March 2019
Performance evaluation of Bragg coherent diffraction imaging Öztürk, H.; Huang, X.; Yan, H. New Journal of Physics, Vol. 19, Issue 10 https://doi.org/10.1088/1367-2630/aa83a9	journal	October 2017
Multimodal hard x-ray imaging with resolution approaching 10 nm for studies in material science Yan, Hanfei; Bouet, Nathalie; Zhou, Juan Nano Futures, Vol. 2, Issue 1 https://doi.org/10.1088/2399-1984/aab25d	journal	March 2018
Piezoresistance Effect in Germanium and Silicon Smith, Charles S. Physical Review, Vol. 94, Issue 1 https://doi.org/10.1103/PhysRev.94.42	journal	April 1954
Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy Hüe, Florian; Hÿtch, Martin; Bender, Hugo Physical Review Letters, Vol. 100, Issue 15 https://doi.org/10.1103/PhysRevLett.100.156602	journal	April 2008
Three-dimensional Bragg coherent diffraction imaging of an extended ZnO crystal Huang, Xiaojing; Harder, Ross; Leake, Steven Journal of Applied Crystallography, Vol. 45, Issue 4 https://doi.org/10.1107/S0021889812018900	journal	June 2012
Design and performance of an X-ray scanning microscope at the Hard X-ray Nanoprobe beamline of NSLS-II Nazaretski, E.; Yan, H.; Lauer, K. Journal of Synchrotron Radiation, Vol. 24, Issue 6 https://doi.org/10.1107/S1600577517011183	journal	October 2017
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm IEEE Transactions on Electron Devices, Vol. 47, Issue 12 https://doi.org/10.1109/16.887014	journal	January 2000
Performance improvement of tall triple gate devices with strained SiN layers Collaert, N.; De Keersgieter, A.; Anil, K. G. IEEE Electron Device Letters, Vol. 26, Issue 11 https://doi.org/10.1109/LED.2005.857692	journal	November 2005
A 90-nm Logic Technology Featuring Strained-Silicon Thompson, S. E.; Armstrong, M.; Auth, C. IEEE Transactions on Electron Devices, Vol. 51, Issue 11 https://doi.org/10.1109/TED.2004.836648	journal	November 2004
Silicon CMOS devices beyond scaling Haensch, W.; Nowak, E. J.; Dennard, R. H. IBM Journal of Research and Development, Vol. 50, Issue 4.5 https://doi.org/10.1147/rd.504.0339	journal	July 2006
Achieving diffraction-limited nanometer-scale X-ray point focus with two crossed multilayer Laue lenses: alignment challenges Yan, Hanfei; Huang, Xiaojing; Bouet, Nathalie Optics Express, Vol. 25, Issue 21 https://doi.org/10.1364/OE.25.025234	journal	January 2017
Tunable hard x-ray nanofocusing with Fresnel zone plates fabricated using deep etching Li, Kenan; Ali, Sajid; Wojcik, Michael Optica, Vol. 7, Issue 5 https://doi.org/10.1364/OPTICA.387445	journal	January 2020
Efficient concentration of high-energy x-rays for diffraction-limited imaging resolution Cesar da Silva, Julio; Pacureanu, Alexandra; Yang, Yang Optica, Vol. 4, Issue 5 https://doi.org/10.1364/optica.4.000492	journal	January 2017

Similar Records

SiGe/Si electronics and optoelectronics

Journal Article · Sat May 01 04:00:00 UTC 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena · OSTI ID:147083

Wang, K L; Karunasiri, R P.G.

Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant

Journal Article · Fri Jul 15 00:00:00 UTC 2022 · Journal of Applied Physics · OSTI ID:1877177

Turner, Emily M.; Campbell, Quinn; Avci, Ibrahim; +4 more

Buffer layers for narrow bandgap a-SiGe solar cells

Conference · Thu Jul 01 04:00:00 UTC 1999 · OSTI ID:20107976

Liao, X B; Walker, J; Deng, X

Title: Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Citation Formats

References (41)

Similar Records

Related Subjects