Using irradiation-induced defects as pinning sites to minimize self-alignment in twisted bilayer graphene

Journal Article · Mon Apr 12 00:00:00 UTC 2021 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0039703 · OSTI ID:1850955

Chen, Di  ^[1]; Shao, Lin  ^[2]

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1. University of Houston, Houston, TX (United States). The Texas Center for Superconductivity; University of Houston, Houston, TX (United States). Department of Physics,; Texas A&M Univ., College Station, TX (United States)
2. Texas A&M University, College Station, TX (United States). Department of Nuclear Engineering,

Preparing bi-layer graphene under a magic twisting angle of ~1.1° has been challenging due to its strong tendency for self-alignment. We propose a method to pin graphene layers and minimize their self-rotation when positioned close to each other. The feasibility is demonstrated by the present study using molecular dynamics simulations. C₆₀ clusters are used to bombard two individual graphene layers, creating damage on both layers. When two irradiated layers are moving closer to each other, defects from irradiation damaged zones can interact with each other, hence acting as pinning sites to immobilize graphene and minimize rotation or gliding. Dangling bonds from defective regions of each plane induce the formation of sp bonds. Upon sliding, the bond is strong enough to induce the formation of one-dimensional carbon single chain, acting as a thread to constrain the relative movements.

• Research Organization: Texas A & M Univ., College Station, TX (United States). Texas A & M Engineering Experiment Station
• Sponsoring Organization: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: SC0006725
• OSTI ID: 1850955
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 118; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English