Detection of uncompensated magnetization at the interface of an epitaxial antiferromagnetic insulator
Abstract
We have probed directly the temperature and magnetic field dependence of pinned uncompensated magnetization at the interface of antiferromagnetic FeF2 with Cu, using FeF2-Cu-Co spin valves. Electrons polarized by the Co layer are scattered by the pinned uncompensated moments at the FeF2-Cu interface giving rise to giant magnetoresistance. We determined the direction and magnitude of the pinned uncompensated magnetization at different magnetic fields and temperatures using the angular dependencies of resistance. The strong FeF2 anisotropy pins the uncompensated magnetization along the easy axis independent of the cooling field orientation. Most interestingly, magnetic fields as high as 90 kOe cannot break the pinning at the FeF2-Cu interface. This proves that the pinned interfacial magnetization is strongly coupled to the antiferromagnetic order inside the bulk FeF2 layer. Studies as a function of FeF2 crystalline orientation show that uncompensated spins are only detected in a spin valve with (110) crystal orientation, but not in valves containing FeF2(100) and FeF2(001). This observation is in agreement with symmetry-related considerations which predict the equilibrium boundary magnetization for the FeF2(110) layer.
- Authors:
-
[1];
[3];
[1]
- Univ. of California San Diego, La Jolla, CA (United States)
- Texas A & M Univ., College Station, TX (United States)
- Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center of Materials and Nanoscience
- Publication Date:
- Research Org.:
- Univ. of California, San Diego, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1849979
- Grant/Contract Number:
- FG02-87ER45332; DMR-1609776; DMR-1420645
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B
- Additional Journal Information:
- Journal Volume: 102; Journal Issue: 17; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Materials Science; Physics; Antiferromagnetism; Giant magnetoresistance; Magnetotransport; Spintronics; Interfaces; Spin valves; T-symmetry
Citation Formats
Lapa, Pavel N., Lee, Min-Han, Roshchin, Igor V., Belashchenko, Kirill D., and Schuller, Ivan K. Detection of uncompensated magnetization at the interface of an epitaxial antiferromagnetic insulator. United States: N. p., 2020.
Web. doi:10.1103/physrevb.102.174406.
Lapa, Pavel N., Lee, Min-Han, Roshchin, Igor V., Belashchenko, Kirill D., & Schuller, Ivan K. Detection of uncompensated magnetization at the interface of an epitaxial antiferromagnetic insulator. United States. https://doi.org/10.1103/physrevb.102.174406
Lapa, Pavel N., Lee, Min-Han, Roshchin, Igor V., Belashchenko, Kirill D., and Schuller, Ivan K. Thu .
"Detection of uncompensated magnetization at the interface of an epitaxial antiferromagnetic insulator". United States. https://doi.org/10.1103/physrevb.102.174406. https://www.osti.gov/servlets/purl/1849979.
@article{osti_1849979,
title = {Detection of uncompensated magnetization at the interface of an epitaxial antiferromagnetic insulator},
author = {Lapa, Pavel N. and Lee, Min-Han and Roshchin, Igor V. and Belashchenko, Kirill D. and Schuller, Ivan K.},
abstractNote = {We have probed directly the temperature and magnetic field dependence of pinned uncompensated magnetization at the interface of antiferromagnetic FeF2 with Cu, using FeF2-Cu-Co spin valves. Electrons polarized by the Co layer are scattered by the pinned uncompensated moments at the FeF2-Cu interface giving rise to giant magnetoresistance. We determined the direction and magnitude of the pinned uncompensated magnetization at different magnetic fields and temperatures using the angular dependencies of resistance. The strong FeF2 anisotropy pins the uncompensated magnetization along the easy axis independent of the cooling field orientation. Most interestingly, magnetic fields as high as 90 kOe cannot break the pinning at the FeF2-Cu interface. This proves that the pinned interfacial magnetization is strongly coupled to the antiferromagnetic order inside the bulk FeF2 layer. Studies as a function of FeF2 crystalline orientation show that uncompensated spins are only detected in a spin valve with (110) crystal orientation, but not in valves containing FeF2(100) and FeF2(001). This observation is in agreement with symmetry-related considerations which predict the equilibrium boundary magnetization for the FeF2(110) layer.},
doi = {10.1103/physrevb.102.174406},
journal = {Physical Review. B},
number = 17,
volume = 102,
place = {United States},
year = {Thu Nov 05 00:00:00 EST 2020},
month = {Thu Nov 05 00:00:00 EST 2020}
}
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Works referenced in this record:
Antiferromagnetic spin flop and exchange bias
journal, March 2000
- Nogués, J.; Morellon, L.; Leighton, C.
- Physical Review B, Vol. 61, Issue 10
Exchange bias: The antiferromagnetic bulk matters
journal, August 2014
- Basaran, Ali C.; Saerbeck, T.; de la Venta, J.
- Applied Physics Letters, Vol. 105, Issue 7
Perpendicular magnetic anisotropy in bulk and thin-film CuMnAs for antiferromagnetic memory applications
journal, October 2018
- Zhuravlev, I. A.; Adhikari, A.; Belashchenko, K. D.
- Applied Physics Letters, Vol. 113, Issue 16
Magnetoresistive detection of strongly pinned uncompensated magnetization in antiferromagnetic FeMn
journal, January 2017
- Lapa, Pavel N.; Roshchin, Igor V.; Ding, Junjia
- Physical Review B, Vol. 95, Issue 2
A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction
journal, March 2011
- Park, B. G.; Wunderlich, J.; Martí, X.
- Nature Materials, Vol. 10, Issue 5
Robust isothermal electric control of exchange bias at room temperature
journal, June 2010
- He, Xi; Wang, Yi; Wu, Ning
- Nature Materials, Vol. 9, Issue 7
Antiferromagnetic spintronics
journal, February 2018
- Baltz, V.; Manchon, A.; Tsoi, M.
- Reviews of Modern Physics, Vol. 90, Issue 1
First-principles study of electronic, vibrational, elastic, and magnetic properties of FeF as a function of pressure
journal, April 2012
- López-Moreno, S.; Romero, A. H.; Mejía-López, J.
- Physical Review B, Vol. 85, Issue 13
Macroscopic magnetic fields of antiferromagnets
journal, May 1996
- Andreev, A. F.
- Journal of Experimental and Theoretical Physics Letters, Vol. 63, Issue 9
The antiferromagnetic spin flop boundary in FeF 2
journal, August 1978
- Rezende, S. M.
- Journal of Physics C: Solid State Physics, Vol. 11, Issue 16
Temperature dependence of FeF2 spin flop field
journal, February 1983
- Jaccarino, V.; King, A. R.; Motokawa, M.
- Journal of Magnetism and Magnetic Materials, Vol. 31-34
Exchange anisotropy in coupled films of Ni 81 Fe 19 with NiO and Co x Ni 1− x O
journal, June 1992
- Carey, M. J.; Berkowitz, A. E.
- Applied Physics Letters, Vol. 60, Issue 24
Exchange induced unidirectional anisotropy at FeMn‐Ni80Fe20 interfaces
journal, March 1981
- Tsang, C.; Heiman, N.; Lee, Kenneth
- Journal of Applied Physics, Vol. 52, Issue 3
Magnetic Phase Diagram of Mn from Ultrasonic and Differential Magnetization Measurements
journal, April 1970
- Shapira, Y.; Foner, S.
- Physical Review B, Vol. 1, Issue 7
Role of interfacial structure on exchange-biased
journal, March 1999
- Nogués, J.; Moran, T. J.; Lederman, D.
- Physical Review B, Vol. 59, Issue 10
Conduction of spin currents through insulating antiferromagnetic oxides
journal, December 2014
- Hahn, Christian; de Loubens, Grégoire; Naletov, Vladimir V.
- EPL (Europhysics Letters), Vol. 108, Issue 5
Exchange biasing in MBE-grown Ni80Fe20/Fe50Mn50 bilayers
journal, July 1995
- Jungblut, R.; Coehoorn, R.; Johnson, M. T.
- Journal of Magnetism and Magnetic Materials, Vol. 148, Issue 1-2
Angular dependence of exchange anisotropy on the cooling field in ferromagnet/fluoride thin films
journal, January 2006
- Olamit, Justin; Li, Zhi-Pan; Schuller, Ivan K.
- Physical Review B, Vol. 73, Issue 2
Monte Carlo simulations of exchange bias of ferromagnetic thin films on
journal, November 2004
- Lederman, David; Ramírez, Ricardo; Kiwi, Miguel
- Physical Review B, Vol. 70, Issue 18
Equilibrium Magnetization at the Boundary of a Magnetoelectric Antiferromagnet
journal, October 2010
- Belashchenko, K. D.
- Physical Review Letters, Vol. 105, Issue 14
Large exchange bias and its connection to interface structure in FeF 2 –Fe bilayers
journal, May 1996
- Nogués, J.; Lederman, D.; Moran, T. J.
- Applied Physics Letters, Vol. 68, Issue 22
Dipole-induced exchange bias
journal, January 2017
- Torres, Felipe; Morales, Rafael; Schuller, Ivan K.
- Nanoscale, Vol. 9, Issue 43
Loop bifurcation and magnetization rotation in exchange-biased
journal, July 2005
- Olamit, Justin; Arenholz, Elke; Li, Zhi-Pan
- Physical Review B, Vol. 72, Issue 1
Electrical switching of an antiferromagnet
journal, January 2016
- Wadley, P.; Howells, B.; elezny, J.
- Science, Vol. 351, Issue 6273
Exchange bias
journal, February 1999
- Nogués, J.; Schuller, Ivan K.
- Journal of Magnetism and Magnetic Materials, Vol. 192, Issue 2
Terahertz electrical writing speed in an antiferromagnetic memory
journal, March 2018
- Olejník, Kamil; Seifert, Tom; Kašpar, Zdeněk
- Science Advances, Vol. 4, Issue 3
Correlation between Exchange Bias and Pinned Interfacial Spins
journal, July 2003
- Ohldag, H.; Scholl, A.; Nolting, F.
- Physical Review Letters, Vol. 91, Issue 1
Exchange biasing in MBE grown Fe3O4/CoO bilayers: The antiferromagnetic layer thickness dependence
journal, January 1996
- van der Zaag, P. J.; Ball, A. R.; Feiner, L. F.
- Journal of Applied Physics, Vol. 79, Issue 8