4D-STEM of Beam-Sensitive Materials
Abstract
We report that a scanning electron nanobeam diffraction, or 4D-STEM (four-dimensional scanning transmission electron microscopy), is a flexible and powerful approach to elucidate structure from "soft" materials that are challenging to image in the transmission electron microscope because their structure is easily damaged by the electron beam. In a 4D-STEM experiment, a converged electron beam is scanned across the sample, and a pixelated camera records a diffraction pattern at each scan position. This four-dimensional data set can be mined for various analyses, producing maps of local crystal orientation, structural distortions, crystallinity, or different structural classes. Holding the sample at cryogenic temperatures minimizes diffusion of radicals and the resulting damage and disorder caused by the electron beam. The total fluence of incident electrons can easily be controlled during 4D-STEM experiments by careful use of the beam blanker, steering of the localized electron dose, and by minimizing the fluence in the convergent beam thus minimizing beam damage. This technique can be applied to both organic and inorganic materials that are known to be beam-sensitive; they can be highly crystalline, semicrystalline, mixed phase, or amorphous. One common example is the case for many organic materials that have a π-π stacking of polymer chainsmore »
- Authors:
-
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1845677
- Grant/Contract Number:
- AC02-05CH11231; DMR 1548924
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Accounts of Chemical Research
- Additional Journal Information:
- Journal Volume: 54; Journal Issue: 11; Journal ID: ISSN 0001-4842
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; analytical apparatus; transmission electron micorscopy; diffraction; probes; materials
Citation Formats
Bustillo, Karen C., Zeltmann, Steven E., Chen, Min, Donohue, Jennifer, Ciston, Jim, Ophus, Colin, and Minor, Andrew M. 4D-STEM of Beam-Sensitive Materials. United States: N. p., 2021.
Web. doi:10.1021/acs.accounts.1c00073.
Bustillo, Karen C., Zeltmann, Steven E., Chen, Min, Donohue, Jennifer, Ciston, Jim, Ophus, Colin, & Minor, Andrew M. 4D-STEM of Beam-Sensitive Materials. United States. https://doi.org/10.1021/acs.accounts.1c00073
Bustillo, Karen C., Zeltmann, Steven E., Chen, Min, Donohue, Jennifer, Ciston, Jim, Ophus, Colin, and Minor, Andrew M. Wed .
"4D-STEM of Beam-Sensitive Materials". United States. https://doi.org/10.1021/acs.accounts.1c00073. https://www.osti.gov/servlets/purl/1845677.
@article{osti_1845677,
title = {4D-STEM of Beam-Sensitive Materials},
author = {Bustillo, Karen C. and Zeltmann, Steven E. and Chen, Min and Donohue, Jennifer and Ciston, Jim and Ophus, Colin and Minor, Andrew M.},
abstractNote = {We report that a scanning electron nanobeam diffraction, or 4D-STEM (four-dimensional scanning transmission electron microscopy), is a flexible and powerful approach to elucidate structure from "soft" materials that are challenging to image in the transmission electron microscope because their structure is easily damaged by the electron beam. In a 4D-STEM experiment, a converged electron beam is scanned across the sample, and a pixelated camera records a diffraction pattern at each scan position. This four-dimensional data set can be mined for various analyses, producing maps of local crystal orientation, structural distortions, crystallinity, or different structural classes. Holding the sample at cryogenic temperatures minimizes diffusion of radicals and the resulting damage and disorder caused by the electron beam. The total fluence of incident electrons can easily be controlled during 4D-STEM experiments by careful use of the beam blanker, steering of the localized electron dose, and by minimizing the fluence in the convergent beam thus minimizing beam damage. This technique can be applied to both organic and inorganic materials that are known to be beam-sensitive; they can be highly crystalline, semicrystalline, mixed phase, or amorphous. One common example is the case for many organic materials that have a π-π stacking of polymer chains or rings on the order of 3.4-4.2 Å separation. If these chains or rings are aligned in some regions, they will produce distinct diffraction spots (as would other crystalline spacings in this range), though they may be weak or diffuse for disordered or weakly scattering materials. We can reconstruct the orientation of the π-π stacking, the degree of π-π stacking in the sample, and the domain size of the aligned regions. This Account summarizes illumination conditions and experimental parameters for 4D-STEM experiments with the goal of producing images of structural features for materials that are beam-sensitive. We will discuss experimental parameters including sample cooling, probe size and shape, fluence, and cameras. 4D-STEM has been applied to a variety of materials, not only as an advanced technique for model systems, but as a technique for the beginning microscopist to answer materials science questions. It is noteworthy that the experimental data acquisition does not require an aberration-corrected TEM but can be produced on a variety of instruments with the right attention to experimental parameters.},
doi = {10.1021/acs.accounts.1c00073},
journal = {Accounts of Chemical Research},
number = 11,
volume = 54,
place = {United States},
year = {Wed May 12 00:00:00 EDT 2021},
month = {Wed May 12 00:00:00 EDT 2021}
}
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