Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators

Thiel, Lillian; Logan, Alan D.; Chakravarthi, Srivatsa; Shree, Shivangi; Hestroffer, Karine; Hatami, Fariba; Fu, Kai-Mei C.

doi:10.1364/OE.446244

Title: Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators

Journal Article · Wed Feb 16 00:00:00 UTC 2022 · Optics Express

DOI: https://doi.org/10.1364/OE.446244 · OSTI ID:1845362

Thiel, Lillian;

;

; Shree, Shivangi; Hestroffer, Karine; Hatami, Fariba; Fu, Kai-Mei C.

We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on a silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of 10 ⁴ . Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion.

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Sponsoring Organization:: USDOE

OSTI ID:: 1845362

Journal Information:: Optics Express, Journal Name: Optics Express Journal Issue: 5 Vol. 30; ISSN 1094-4087; ISSN OPEXFF

Publisher:: Optical Society of AmericaCopyright Statement

Country of Publication:: United States

Language:: English

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