Progress in Epitaxial Thin-Film Na3Bi as a Topological Electronic Material

Di Bernardo, Iolanda; Hellerstedt, Jack; Liu, Chang; Akhgar, Golrokh; Wu, Weikang; Yang, Shengyuan A.; Culcer, Dimitrie; Mo, Sung‐Kwan; Adam, Shaffique; Edmonds, Mark T.; Fuhrer, Michael S.

doi:10.1002/adma.202005897

Title: Progress in Epitaxial Thin-Film Na₃Bi as a Topological Electronic Material

Journal Article · Tue Feb 02 23:00:00 EST 2021 · Advanced Materials

DOI: https://doi.org/10.1002/adma.202005897 · OSTI ID:1818245

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Monash Univ., Clayton, VIC (Australia). Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies; Monash Univ., Clayton, VIC (Australia)
Monash Univ., Clayton, VIC (Australia)
Singapore Univ. of Technology and Design (Singapore). Research Lab. for Quantum Materials
Australian Research Council Centre of Excellence in Future Low‐Energy Electronics Technologies University of New South Wales Sydney New South Wales 2052 Australia; School of Physics University of New South Wales Sydney New South Wales 2052 Australia
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Yale-NUS College, Singapore (Singapore)
Monash Univ., Clayton, VIC (Australia). Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies; Monash Univ., Clayton, VIC (Australia); Monash Univ., Clayton, VIC (Australia). Monash Centre for Atomically Thin Materials

Trisodium bismuthide (Na₃ Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na₃ Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na₃ Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. Furthermore, the emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Australian Research Council (ARC); Ministry of Education; National University of Singapore

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1818245

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 11 Vol. 33; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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