Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors

He, Zhengran; Zhang, Ziyang; Asare-Yeboah, Kyeiwaa; Bi, Sheng; Chen, Jihua; Li, Dawen

doi:10.3390/polym13030402

Title: Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors

Journal Article · Wed Jan 27 00:00:00 UTC 2021 · Polymers

DOI: https://doi.org/10.3390/polym13030402 · OSTI ID:1815617

^[1]; Zhang, Ziyang ^[2]; Asare-Yeboah, Kyeiwaa ^[3]; Bi, Sheng ^[4]; Chen, Jihua ^[5]; Li, Dawen ^[6]

Univ. of Alabama, Tuscaloosa, AL (United States). Dept. of Electrical and Computer Engineering; OSTI
Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
Pennsylvania State Univ., Erie, PA (United States). Behrend. Dept. of Electrical and Computer Engineering
Dalin Univ. of Technology (China). Key Lab. for Precision and Non-Traditional Machining Technology of the Ministry of Education
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Univ. of Alabama, Tuscaloosa, AL (United States). Dept. of Electrical and Computer Engineering

In this study, we demonstrated for the first time that a metal-containing semicrystalline polymer was used as an additive to mediate the thin film morphology of solution-grown, small-molecule organic semiconductors. By mixing polyferrocenylsilane (PFS) with an extensively-studied organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), PFS as a semicrystalline polymer independently forms nucleation and crystallization while simultaneously ameliorating diffusivity of the blend system and tuning the surface energies as a result of its partially amorphous property. We discovered that the resultant blend film exhibited a 6-fold reduction in crystal misorientation angle and a 3-fold enlargement in average grain width. Enhanced crystal orientation considerably reduces mobility variation, while minimized defects and trap centers located at grain boundaries lessen the adverse impact on the charge transport. Consequently, bottom-gate, top-contact organic thin film transistors (OTFTs) based on the TIPS pentacene/PFS mixture yielded a 40% increase in performance consistency (represented by the ratio of average mobility to the standard deviation of mobility). The PFS semicrystalline polymer-controlled crystallization can be used to regulate the thin film morphology of other high-performance organic semiconductors and shed light on applications in organic electronic devices.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1815617

Journal Information:: Polymers, Journal Name: Polymers Journal Issue: 3 Vol. 13; ISSN POLYCK; ISSN 2073-4360

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
organic electronics
organic thin film transistors
polyferrocenylsilane
small-molecule semiconductor
thin film morphology

Title: Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors

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