Defect-Mediated Charge-Carrier Trapping and Nonradiative Recombination in WSe2 Monolayers

Li, Lesheng; Carter, Emily A.

doi:10.1021/jacs.9b04663

Title: Defect-Mediated Charge-Carrier Trapping and Nonradiative Recombination in WSe₂ Monolayers

Journal Article · Tue Jun 04 20:00:00 EDT 2019 · Journal of the American Chemical Society

DOI: https://doi.org/10.1021/jacs.9b04663 · OSTI ID:1812547

^[1];

^[2]

Princeton Univ., NJ (United States); Princeton University
Princeton Univ., NJ (United States)

Nonradiative charge-carrier recombination in transition-metal dichalcogenide (TMD) monolayers severely limits their use in solar energy conversion technologies. Because defects serve as recombination sites, developing a quantitative description of charge-carrier dynamics in defective TMD monolayers can shed light on recombination mechanisms. Herein we report a first-principles investigation of charge-carrier dynamics in pristine and defective WSe₂ monolayers with three of the most probable defects, namely, Se vacancies, W vacancies, and SeW antisites. We predict that Se vacancies slow down recombination by nearly an order of magnitude relative to defect-free samples by breaking the monolayer’s symmetry and thereby reducing the spectral intensity of the A_1g phonon mode that promotes recombination in the pristine monolayer. By contrast, we find W vacancies accelerate recombination by more than an order of magnitude, with half of the recombination events bypassing charge traps. The subsequent dynamics feature both charge trapping and charge-trap-assisted recombination. Although SeW antisites also slightly accelerate recombination, the predicted mechanism is different from the W vacancy case. First, a shallow energy level traps a photoexcited electron. Then, both shallow- and deep-trap-assisted recombination can occur simultaneously. Accelerated recombination arises for W vacancies and SeW antisites because they introduce new phonon modes that strongly couple to electron and hole dynamics. This work thus provides a detailed understanding of the mechanisms behind charge-carrier recombination in WSe₂ monolayers with distinct defects. Furthermore, materials engineering, particularly to avoid W vacancies, could advance this technology. The insights derived are important for future design of high-performance photoactive devices based on WSe₂ monolayers.

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Research Organization:: Princeton Univ., NJ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002120

OSTI ID:: 1812547

Journal Information:: Journal of the American Chemical Society, Journal Name: Journal of the American Chemical Society Journal Issue: 26 Vol. 141; ISSN 0002-7863

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Defect-Mediated Charge-Carrier Trapping and Nonradiative Recombination in WSe2 Monolayers

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Title: Defect-Mediated Charge-Carrier Trapping and Nonradiative Recombination in WSe₂ Monolayers