Gap States in Methylammonium Lead Halides: The Link to Dimethylsulfoxide?
Abstract
Abstract Understanding the origin and distribution of electronic gap states in metal halide perovskite (MHP) thin films is crucial to the further improvement of the efficiency and long‐term stability of MHP‐based optoelectronic devices. In this work, the impact of Lewis‐basic additives introduced in the precursor solution on the density of states in the perovskite bandgap is investigated. Ultraviolet photoemission spectroscopy and contact potential difference measurements are conducted on MHP thin films processed from dimethylformamide (DMF)‐based solutions to which either no additive, dimethylsulfoxide (DMSO), or N ‐methylpyrrolidine‐2‐thione (NMPT) is added. The results show the presence of a density of states in the gap of methylammonium lead halide films processed from DMSO‐containing solution. The density of gap states is either suppressed when the methylammonium concentration in mixed cation films is reduced or when NMPT is used as an additive, and eliminated when methylammonium (MA) is replaced with cesium or formamidinium (FA). These results are consistent with the notion that reaction products that result from DMSO reacting with MA + in the precursor solution are responsible for the formation of gap states.
- Authors:
-
[1];
[1]
- Department of Electrical Engineering Princeton University Princeton NJ 08544 USA
- Department of Chemical and Biological Engineering Princeton University Princeton NJ 08544 USA
- Department of Chemical and Biological Engineering Princeton University Princeton NJ 08544 USA, Andlinger Center for Energy and the Environment Princeton University Princeton NJ 08544 USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1804149
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Name: Advanced Materials Journal Volume: 32 Journal Issue: 42; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Zhang, Fengyu, Hamill, Jr., J. Clay, Loo, Yueh‐Lin, and Kahn, Antoine. Gap States in Methylammonium Lead Halides: The Link to Dimethylsulfoxide?. Germany: N. p., 2020.
Web. doi:10.1002/adma.202003482.
Zhang, Fengyu, Hamill, Jr., J. Clay, Loo, Yueh‐Lin, & Kahn, Antoine. Gap States in Methylammonium Lead Halides: The Link to Dimethylsulfoxide?. Germany. https://doi.org/10.1002/adma.202003482
Zhang, Fengyu, Hamill, Jr., J. Clay, Loo, Yueh‐Lin, and Kahn, Antoine. Thu .
"Gap States in Methylammonium Lead Halides: The Link to Dimethylsulfoxide?". Germany. https://doi.org/10.1002/adma.202003482.
@article{osti_1804149,
title = {Gap States in Methylammonium Lead Halides: The Link to Dimethylsulfoxide?},
author = {Zhang, Fengyu and Hamill, Jr., J. Clay and Loo, Yueh‐Lin and Kahn, Antoine},
abstractNote = {Abstract Understanding the origin and distribution of electronic gap states in metal halide perovskite (MHP) thin films is crucial to the further improvement of the efficiency and long‐term stability of MHP‐based optoelectronic devices. In this work, the impact of Lewis‐basic additives introduced in the precursor solution on the density of states in the perovskite bandgap is investigated. Ultraviolet photoemission spectroscopy and contact potential difference measurements are conducted on MHP thin films processed from dimethylformamide (DMF)‐based solutions to which either no additive, dimethylsulfoxide (DMSO), or N ‐methylpyrrolidine‐2‐thione (NMPT) is added. The results show the presence of a density of states in the gap of methylammonium lead halide films processed from DMSO‐containing solution. The density of gap states is either suppressed when the methylammonium concentration in mixed cation films is reduced or when NMPT is used as an additive, and eliminated when methylammonium (MA) is replaced with cesium or formamidinium (FA). These results are consistent with the notion that reaction products that result from DMSO reacting with MA + in the precursor solution are responsible for the formation of gap states.},
doi = {10.1002/adma.202003482},
journal = {Advanced Materials},
number = 42,
volume = 32,
place = {Germany},
year = {Thu Sep 03 00:00:00 EDT 2020},
month = {Thu Sep 03 00:00:00 EDT 2020}
}
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