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Title: Nanoscale dynamics during self-organized ion beam patterning of Si. II. Kr + bombardment

Abstract

Understanding the self-organized ion beam nanopatterning of elemental semiconductors, particularly silicon, is of intrinsic scientific and technological interest. This is the second component of a two-part coherent x-ray scattering and x-ray photon correlation spectroscopy (XPCS) investigation of the kinetics and fluctuation dynamics of nanoscale ripple development on silicon during 1 keV Ar+ (part I) and Kr+ bombardment at 65 degrees polar angle. Here it is found that the ion-enhanced viscous flow relaxation is essentially equal for Kr+-induced patterning as previously found for Ar+ patterning despite the difference in ion masses. However, the magnitude of the surface curvature-dependent roughening rate in the early-stage kinetics is larger for Kr+ than for Ar+, consistent with expectations that the heavier ion gives an increased mass redistributive contribution to the initial surface instability. As with the Ar+ case, fluctuation dynamics in the late stage show a peak in correlation times at the length scale corresponding to the dominant structural feature on the surface-the ripples. Finally, it is shown that speckle motion during the surface evolution can be analyzed to determine spatial inhomogeneities in erosion rate and ripple velocity. This allows the direction and speed of ripple motion to be measured in a real time experiment.more » In the present case, ripple motion is found to be into the projected direction of the ion source, in contrast to expectations from an existing sputter erosion driven model with parameters derived from binary collision approximation simulations.« less

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [2]; ORCiD logo [3];  [3]
  1. Boston Univ., MA (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
  3. Univ. of Vermont, Burlington, VT (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1797366
Alternate Identifier(s):
OSTI ID: 1798483; OSTI ID: 1833387
Report Number(s):
BNL-221680-2021-JAAM; BNL-221681-2021-JAAM
Journal ID: ISSN 2469-9950; TRN: US2212338
Grant/Contract Number:  
SC0012704; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 103; Journal Issue: 19; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Myint, Peco, Ludwig, Karl F., Wiegart, Lutz, Zhang, Yugang, Fluerasu, Andrei, Zhang, Xiaozhi, and Headrick, Randall L. Nanoscale dynamics during self-organized ion beam patterning of Si. II. Kr + bombardment. United States: N. p., 2021. Web. doi:10.1103/physrevb.103.195424.
Myint, Peco, Ludwig, Karl F., Wiegart, Lutz, Zhang, Yugang, Fluerasu, Andrei, Zhang, Xiaozhi, & Headrick, Randall L. Nanoscale dynamics during self-organized ion beam patterning of Si. II. Kr + bombardment. United States. https://doi.org/10.1103/physrevb.103.195424
Myint, Peco, Ludwig, Karl F., Wiegart, Lutz, Zhang, Yugang, Fluerasu, Andrei, Zhang, Xiaozhi, and Headrick, Randall L. Thu . "Nanoscale dynamics during self-organized ion beam patterning of Si. II. Kr + bombardment". United States. https://doi.org/10.1103/physrevb.103.195424. https://www.osti.gov/servlets/purl/1797366.
@article{osti_1797366,
title = {Nanoscale dynamics during self-organized ion beam patterning of Si. II. Kr + bombardment},
author = {Myint, Peco and Ludwig, Karl F. and Wiegart, Lutz and Zhang, Yugang and Fluerasu, Andrei and Zhang, Xiaozhi and Headrick, Randall L.},
abstractNote = {Understanding the self-organized ion beam nanopatterning of elemental semiconductors, particularly silicon, is of intrinsic scientific and technological interest. This is the second component of a two-part coherent x-ray scattering and x-ray photon correlation spectroscopy (XPCS) investigation of the kinetics and fluctuation dynamics of nanoscale ripple development on silicon during 1 keV Ar+ (part I) and Kr+ bombardment at 65 degrees polar angle. Here it is found that the ion-enhanced viscous flow relaxation is essentially equal for Kr+-induced patterning as previously found for Ar+ patterning despite the difference in ion masses. However, the magnitude of the surface curvature-dependent roughening rate in the early-stage kinetics is larger for Kr+ than for Ar+, consistent with expectations that the heavier ion gives an increased mass redistributive contribution to the initial surface instability. As with the Ar+ case, fluctuation dynamics in the late stage show a peak in correlation times at the length scale corresponding to the dominant structural feature on the surface-the ripples. Finally, it is shown that speckle motion during the surface evolution can be analyzed to determine spatial inhomogeneities in erosion rate and ripple velocity. This allows the direction and speed of ripple motion to be measured in a real time experiment. In the present case, ripple motion is found to be into the projected direction of the ion source, in contrast to expectations from an existing sputter erosion driven model with parameters derived from binary collision approximation simulations.},
doi = {10.1103/physrevb.103.195424},
journal = {Physical Review B},
number = 19,
volume = 103,
place = {United States},
year = {Thu May 20 00:00:00 EDT 2021},
month = {Thu May 20 00:00:00 EDT 2021}
}

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