Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS2

Mitterreiter, Elmar; Schuler, Bruno; Cochrane, Katherine A.; Wurstbauer, Ursula; Weber-Bargioni, Alexander; Kastl, Christoph; Holleitner, Alexander W.

doi:10.1021/acs.nanolett.0c01222

Title: Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS₂

Journal Article · Tue May 05 00:00:00 UTC 2020 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.0c01222 · OSTI ID:1779245

Mitterreiter, Elmar ^[1];

^[2];

^[3];

^[4]; Weber-Bargioni, Alexander ^[3];

^[1];

^[5]

Technical Univ. of Munich (Germany). Walter Schottky Institut and Physics Dept.
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry; Swiss Federal Laboratories for Materials Science and Technology (Empa), Dübendorf, (Switzerland). nanotech@surfaces Laboratory
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Technical Univ. of Munich (Germany). Walter Schottky Institut and Physics Dept.; Westfälische Wilhelms-Universität Münster (Germany). Institute of Physics
Technical Univ. of Munich (Germany). Walter Schottky Institut and Physics Dept.; Munich Center for Quantum Science and Technology (MCQST), Munich (Germany)

Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS₂ by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS₂ upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1779245

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 6 Vol. 20; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Two-dimensional materials
defect engineering
helium ion microscopy
scanning tunneling microscopy

Title: Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS2

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Title: Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS₂